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A LED structure and method for manufacturing same

A technology for light-emitting diodes and a manufacturing method, which is applied in the directions of electrical components, circuits, semiconductor devices, etc., can solve problems such as the inability to effectively improve the luminous efficiency of light-emitting diodes

Inactive Publication Date: 2005-01-26
FORMOSA EPITAXY INCORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a light-emitting diode structure and its manufacturing method to solve the problem that the prior art cannot effectively improve the luminous efficiency of light-emitting diodes

Method used

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  • A LED structure and method for manufacturing same
  • A LED structure and method for manufacturing same
  • A LED structure and method for manufacturing same

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Embodiment Construction

[0030] The spirit of the present invention is to grow a grid layer during the epitaxial process of the LED assembly, which can make the light emitted toward the inside of the LED assembly reflect back and travel toward the outside, so that all the light will not be continuously It travels inside the light-emitting diode assembly so that it is absorbed by the internal active layer, electrodes, and substrates, thereby improving the luminous efficiency of the light-emitting diode assembly. Such as figure 1 Shown is a basic LED assembly 10 having a mesh layer 102 . A light beam 110 generated by the p-n junction 106 in the figure is totally reflected at the interface between the LED component 10 and the air and returns to the inside of the LED component 10. When the light beam 110 reaches the grid layer 102, it is received by the grid layer. The light beam 110 is not absorbed by the substrate 100 due to the influence of the pattern on the substrate 102 and is reflected back and tr...

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Abstract

The invention provides a LED structure, at least including: a substrate, a grid layer, a first type semiconductor layer and a second type semiconductor layer, where the grid layer has a grid pattern able to make light beams emitted in LED module reflected and travel outwards, thus unable to make all the light beams travel inside the LED module all along so as to be absorbed by all the layers. In addition, the invention also provides a LED manufacturing method, growing a grid layer in the extending course of the LED module to complete the LED structure.

Description

technical field [0001] The invention relates to a manufacturing technology of light-emitting diodes (Light-Emitting Diodes, LEDs), in particular to a technology that can improve the luminous efficiency of the light-emitting diodes. Background technique [0002] Generally, the refractive index of the semiconductor used in light-emitting diodes (refractive index is 2.3) is greater than that of air (refractive index is 1), so most of the light generated by the active layer (also known as the light-emitting layer) in the light-emitting diode is All are totally reflected by the interface between the semiconductor and the air back to the inside of the semiconductor, and the totally reflected light is absorbed by the internal active layer, electrodes and substrate. Therefore, the existing light-emitting diodes generally have the disadvantage of low luminous efficiency. [0003] In order to improve the luminous efficiency of light-emitting diodes, it has been confirmed by current s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/04H01L33/32
Inventor 陈隆建简奉任
Owner FORMOSA EPITAXY INCORPORATION
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