Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light-emitting structure

A light-emitting structure and reflective structure technology, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as high temperature and affect quantum luminous efficiency, and achieve the effect of increasing heat dissipation area, improving luminous efficiency, and good light color

Active Publication Date: 2022-02-01
义乌清越光电技术研究院有限公司
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present invention provides a light-emitting structure, which solves the problem that the traditional packaging method of LED will generate high temperature during operation, which affects the quantum luminous efficiency, thereby improving the luminous efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting structure
  • Light-emitting structure
  • Light-emitting structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] figure 1 is a schematic diagram of a light emitting structure provided by an embodiment of the present invention, refer to figure 1 , the light-emitting structure includes: a substrate 10, an LED chip 20 disposed on the surface of the substrate 10, and a reflective electrode 30 disposed on the side of the LED chip 20 away from the substrate 10; The structure 101 is arranged around the LED chip 20, and the light emission adjustment layer 102 is arranged around the side wall of the LED chip 20 and is located between the reflective structure 101 and the LED chip 20; On the one hand, the distance between the first side and the substrate 10 is equal to the distance between the surface of the LED chip 20 away from the substrate 10 and the substrate 10 ; the light emission adjustment layer 102 includes quantum dots 1021 .

[0025] Wherein, the substrate 10 may be a metal substrate or sapphire, and the substrate 10 is mainly used for heat dissipation. The LED chips 20 include...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The embodiment of the invention discloses a light-emitting structure. The light-emitting structure comprises a substrate, an LED chip arranged on the surface of the substrate, and a reflecting electrode arranged on the side, away from the substrate, of the LED chip; a reflection structure and a light-emitting adjusting layer are further arranged on the substrate, the reflection structure is arranged around the LED chip, and the light-emitting adjusting layer is arranged around the side wall of the LED chip and located between the reflection structure and the LED chip; the edge, away from the surface of the substrate and adjacent to the LED chip, of the light-emitting adjusting layer is a first edge, and the distance between the first edge and the substrate is equal to the distance between the surface, away from the substrate, of the LED chip and the substrate; and the light-emitting adjustment layer includes quantum dots. According to the embodiment of the invention, the problem that the luminous efficiency of the LED chip is affected by high temperature when the LED chip works in a traditional packaging mode is solved, and the luminous efficiency of the LED chip is improved; and the light-emitting adjustment layer adopts quantum dots, and the purity of light converted by the quantum dots is relatively high, so that the chromaticity of light emitted by the whole LED chip is better.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor lighting technology, and in particular to a light emitting structure. Background technique [0002] In recent years, as a new type of luminescent nanomaterial, quantum dots have the characteristics of size-tunable luminescence, narrow luminescence linewidth, high photoluminescence efficiency and thermal stability, so quantum dots that use quantum dots as the light-emitting layer to emit light Diodes are promising light sources for next-generation displays and solid-state lighting. At the same time, due to the advantages of high brightness, low power consumption, wide color gamut, and easy processing, quantum dot light-emitting diodes have received extensive attention and research in the fields of lighting and display in recent years. [0003] Because the LED chip in the traditional packaging method will generate high temperature during operation, the high temperature affects the luminous eff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/38H01L33/50H01L33/64
CPCH01L33/06H01L33/505H01L33/642H01L33/38
Inventor 唐鹏宇穆欣炬马中生
Owner 义乌清越光电技术研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com