Sputtering target, optical information recording medium and process for producing the same

A recording medium and sputtering target technology, applied in the field of sputtering targets, can solve the problems of poor optical properties, such as poor amorphous state, poor amorphous state, good film forming speed, etc., and achieve improved productivity, high transmittance, mechanical properties excellent effect

Active Publication Date: 2007-02-21
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] However, Patent Document 1 has problems including areas where the optical properties and amorphous properties are poor, and Patent Document 2 has problems including areas where a good film-forming rate cannot be obtained and the amorphous properties are poor.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-6

[0047] will be equivalent to 4N of 5μm or less In 2 o 3 Powder, SnO 2 Powder, Ta 2 o 5 Powder, Y 2 o 3 powder, and ZnO powder equivalent to 4N with an average particle diameter of 5 μm or less, were prepared according to the compositions shown in Table 1 and Table 2, mixed by wet method, dried and calcined at 1100°C.

[0048] Then, the calcined powder was finely pulverized by wet method to an average particle diameter of 1 μm, and then a binder was added and granulated by a spray dryer. The granulated powder is then cold-pressed and sintered at 1300°C in an oxygen environment under normal pressure, and finally the sintered material is machined into the shape of a target. The composition and composition ratio of this target (In / (In+Zn+Sn+A), Zn / (In+Zn+Sn+A), Sn / (In+Zn+Sn+A), A / (In+ Zn+Sn+A)) are shown in Table 1 and Table 2.

[0049] example

composition

composition

In / (In+Zn+Sn+A)

Zn / (In+Zn+Sn+A)

Sn / (In+Zn+Sn+A) ...

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PUM

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Abstract

A sputtering target characterized in that it is comprised of an In2O3-ZnO-SnO2 composite oxide whose main component is SnO2 compounded with an oxide of any one or both of Ta and Y elements. There is provided a thin film for optical information recording medium (especially used a protective film) that is stable in film amorphous properties, realizes high film forming speed, excels in adherence with recording layer and mechanical properties and is high in transmittance and that by effecting nonsulfide constitution, can suppress deterioration of adjacent reflective layer and recording layer. Further, there are provided a process for producing the same and a sputtering target for use therein. Accordingly, not only can the performance of optical information recording medium be enhanced but also a striking productivity increase can be attained.

Description

technical field [0001] The present invention relates to a thin film for optical information recording medium (especially used as a protective film) and its manufacturing method and a sputtering target suitable for these. The amorphous state of the sputtering film for optical information recording medium is stable and the film formation The speed is fast, the adhesion to the recording layer is excellent, the mechanical properties are excellent, and the transmittance is high. In addition, since it is composed of non-sulfide, it is not easy to cause deterioration of the adjacent reflective layer and recording layer. Background technique [0002] For a long time, ZnS-SiO is mainly used in the protective layer of phase-change optical information recording media. 2 , has excellent optical properties, thermal properties, and adhesion to the recording layer and other properties, and is widely used. [0003] However, today's rewritable DVD represented by Blue-Ray has further strong ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C04B35/457G11B7/24G11B7/26C04B35/547C23C14/08G11B7/254G11B7/257
CPCG11B2007/25706C23C14/086C04B35/547C04B2235/3284G11B7/266G11B2007/2571C04B2235/3286C04B2235/80C04B2235/3251G11B2007/25708G11B7/2578G11B2007/25715C23C14/3414G11B7/2531G11B7/259C04B2235/3225
Inventor 高见英生矢作政隆
Owner JX NIPPON MINING & METALS CO LTD
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