Method for changing magnetism of ferromagnet CrO2 film using laser induction effect

A laser-induced, thin-film technology, applied in the direction of magnetic layers, static memory, instruments, etc.

Inactive Publication Date: 2011-08-03
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, its light-induced magnetic effect has not attracted people's attention, so it cannot be further applied in the field of optoelectronics.

Method used

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  • Method for changing magnetism of ferromagnet CrO2 film using laser induction effect
  • Method for changing magnetism of ferromagnet CrO2 film using laser induction effect
  • Method for changing magnetism of ferromagnet CrO2 film using laser induction effect

Examples

Experimental program
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Effect test

Embodiment 1

[0020]This embodiment is: the rutile type semi-metallic ferromagnetic material CrO prepared by the pulsed laser irradiation with photon energy of 3.2eV at room temperature 2 film, where CrO 2 The films were prepared on ZrO by chemical vapor deposition in a two-zone tube furnace. 2 On the substrate; a dye laser is used as the pulse excitation source, and its pulse width and repetition frequency are 8ns and 10Hz, respectively;

[0021] Detection of CrO under Pulsed Laser Irradiation by CW Light with Energy of 1.55eV 2 The change of film transmittance, and using the relationship between transmittance and magnetism to obtain CrO under pulsed laser irradiation 2 Magnetic changes in thin films, such as figure 1 As shown in (a), the curves shown by triangles and circles represent CrO 2 The light-induced magnetic change of the film at the temperature of 450K (Tc) as a function of time (%). It can be seen from the figure that CrO 2 The light-induced magnetic change of the film i...

Embodiment 2

[0025] Example 2: At room temperature, the prepared CrO is irradiated with a pulsed laser with a photon energy of 3.5eV 2 thin film; in this example, the detection of CrO 2 Thin-film magnetic detection of laser-induced CrO using continuous light with an energy of 1.55 eV 2 The magnetoresistance change of thin film (Tc~390K) and its change with temperature.

Embodiment 3

[0026] Example 3: At room temperature, the prepared CrO was irradiated with a pulsed laser with a photon energy of 2.0eV 2 film; and the external electric field is regulated, and the form of the external electric field in Example 1 is the same.

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Abstract

This invention discloses a method for changing magnetism of an iron magnetic CrO2 film by using laser inductance effect, which comprises the following steps: in room temperature, using impulse laser with photon energy of 2.0eV-3.5eV to light the iron magnetic CrO2 film; applying an additional electrical filed onto the iron magnetic CrO2 film to adjust the magnetism variable quantity of the CrO2 film under laser induction and relative resistance change at the same step above. The inventive method is not only helpful to illustrate the physical mechanism of the light induced magnetic phase transition, but also is important for developing a novel optical storage magnetic device and optical control device. The method can use the variance of the optical absorption or transmittance in an energy range of 1.2-1.75 eV of the CrO2 film to characterize the magnetism variance of the CrO2 film, and provide a simple and convenient approach for measuring and searching the magnetism variance of the CrO2 film. The method provides a new approach for designing the novel photoelectric magnetic device, and has widely application prospect.

Description

1. Technical field [0001] The present invention relates to a kind of changing CrO 2 A method for thin film magnetism, especially a method for changing CrO by laser-induced effect at room temperature 2 thin-film magnetism. 2. Background technology [0002] The study of light-induced magnetic phase transition is one of the frontier fields that are widely concerned at present. It not only provides a very good stage for the study of the interaction between excited state electrons and local electron spins, lattices, etc., but also has very important application value for the study of light-induced magnetic phase transition, which is very important for promoting high-density optical storage. The development of materials and the development of high-performance molecular electronic devices are of great significance. In 2004, Japan had three major research projects involving this field: the control of light on matter (a project of the Japan Science and Technology Agency), the stu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F10/14G11C11/14
Inventor 刘晓峻吴雪炜程营吴大健
Owner NANJING UNIV
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