Unlock instant, AI-driven research and patent intelligence for your innovation.

Phase shift mask and method for fabricating the same

A phase-shift mask and thin-layer technology, which is applied in the photolithographic process of patterned surface, semiconductor/solid-state device manufacturing, photolithographic process exposure device, etc., can solve the problems such as difficult to use phase-shift mask

Inactive Publication Date: 2007-07-04
SK HYNIX INC
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the phase shift mask was developed for use in a lithography process using transmission optics, it may be difficult to use a phase shift mask in a lithography process for EUV light using reflection optics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase shift mask and method for fabricating the same
  • Phase shift mask and method for fabricating the same
  • Phase shift mask and method for fabricating the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0015] 2 is a simplified cross-sectional view illustrating a phase shift mask structure of a semiconductor device according to an embodiment of the present invention.

[0016] As shown, a multi-thin layer structure 24 is formed on a substrate 21 . The multi-thin layer structure 24 includes molybdenum (Mo) layers 22 and silicon (Si) layers 23 which are alternately and repeatedly stacked on each other in sequential order. A single Mo layer 22 has a thickness of about 2.8 nm, and a single Si layer 23 has a thickness of about 4.2 nm. In addition to the Mo / Si layer structure described above, other multi-thin layer structures can be used. For example, other multi-thin layer structures may include Mo / beryllium (Be), molybdenum ruthenium (MoRu) / Be or Ru / Be.

[0017] A predetermined portion of the multi-thin layer structure 24 is etched to for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

A phase shift mask and a method for fabricating the same are provided. The phase shift mask includes: a substrate; a multiple thin layer structure formed over the substrate, the multiple thin layer structure including an opening formed to a predetermined depth; and an absorption material filling a portion of the opening. The method includes: preparing a substrate; forming a multiple thin layer structure over the substrate; etching a portion of the multiple thin layer structure to form an opening; and filling a portion of the opening with an absorption material.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device; and more particularly, to a phase shift mask used in a photolithography process for extreme ultraviolet (EUV) light and a method of manufacturing the same. Background technique [0002] In general, photolithography utilizes transmission optics, and more specifically, uses phase shift masks to improve resolution. The phase shift mask is formed in a structure including a phase shift layer that can shift the phase of light irradiated onto a specific area of ​​the quartz substrate by 180 degrees. When the photolithography process is performed using the above phase shift mask, a phase difference is generated between light transmitted through the phase shift layer and light not transmitted. Thus, destructive interference occurs between the two lights, thereby improving resolution. [0003] FIG. 1 is a simplified cross-sectional view illustrating a typical phase shift mask s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F7/00H01L21/00G03F1/22G03F1/24G03F1/26G03F1/30G03F7/20H01L21/027
CPCG03F1/24G03F1/32H01L21/0273G03F1/26
Inventor 柳明述
Owner SK HYNIX INC