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Stacked semiconductor device having mask mounted in between stacked dies

Inactive Publication Date: 2005-08-11
STACK DEVICES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0008] The secondary objective of the present invention is to provide a stacked semiconductor device, which the dies stacked in a stable condition.

Problems solved by technology

Such semiconductor device makes a critical interference of the dies in the metal mask by the R.F. IC.

Method used

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  • Stacked semiconductor device having mask mounted in between stacked dies
  • Stacked semiconductor device having mask mounted in between stacked dies
  • Stacked semiconductor device having mask mounted in between stacked dies

Examples

Experimental program
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Embodiment Construction

[0014] As shown in FIG. 1 and FIG. 2, a stacked semiconductor device 10 of the first preferred embodiment of the present invention comprises:

[0015] A substrate 12 has a conductor pattern 14 thereon. The conductor pattern 14 ha a plurality of pads 18, 20, 22.

[0016] A first die 24, which has a radio frequency integral circuit, is bonded on the substrate 12 by an adhesive layer 26 and is electrically connected to the predetermined pads 18 of the conductor pattern 12 by gold wires 28. In other words, the first die 24 is electrically connected to the conductor pattern 14 by wire bonding.

[0017] A first insulating layer 30, which is made of epoxy resin, glue or other insulating materials, is provided on the substrate 12 covering the first die 24 and the gold wires 28.

[0018] A mask 32 is a cup-like element having a top 34 and an annular sidewall 36. On an edge of the sidewall 36 is a connector portion 38. The mask is mounted on the first insulating layer 30 with the connector portion 38...

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PUM

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Abstract

A stacked semiconductor device has a substrate having a conductor pattern thereon and the conductor pattern has a plurality of pads. A first die is mounted on the substrate and is electrically connected to the pads of the conductor pattern by gold wires. A first insulating layer is mounted on the substrate to cover the first die and the gold wires. A mask, which has a top and an annular sidewall, is mounted on the substrate to cover the first insulating layer and the first die. A second die is mounted on the top of the mask and is electrically connected to the pads of the connector pattern by gold wires. A second insulating layer is mounted on the substrate to cover the second die and the gold wires.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates generally to a semiconductor device, and more particularly to a stacked semiconductor device, which has a mask mounted in between the stacked dies. [0003] 2. Description of the Related Art [0004] Semiconductor devices are applied to computer devices, industry equipment, automobiles and military equipment. Recently, the semiconductor devices are applied to communication devices. [0005] In communication device, the Radio Frequency Integral Circuit (R.F. IC) is the most important part of the semiconductor device. The R.F. IC is the device emitting and receiving the radio frequency signals. Such semiconductor device is provided with a metal mask shielding the R.F. IC. The metal shield is to shelter the R.F. IC to prevent the radio frequency signals generated from the R.F. IC interfering with the work of other devices. [0006] In a stacked semiconductor device, the R.F. IC is stacked with oth...

Claims

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Application Information

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IPC IPC(8): H01L23/10H01L25/065H01L29/18
CPCH01L24/45H01L2924/01013H01L25/0657H01L2224/45144H01L2224/48091H01L2224/48227H01L2224/73265H01L2225/0651H01L2225/06541H01L2225/06575H01L2225/06582H01L2924/01079H01L2924/16152H01L2924/3025H01L25/0652H01L2224/32225H01L2924/00014H01L2924/00
Inventor BAI, JIN-CHUNGCHENG, KUANG-PAOHUANG, CHI-PANG
Owner STACK DEVICES CORP
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