Projection exposure apparatus, projection exposure method, and method for producing device
a technology of projection exposure and projection exposure, which is applied in the direction of photomechanical equipment, instruments, printing, etc., can solve the problems of insufficient margin, excessive focus, and inability to adjust and match the wafer surface and image plane, so as to avoid the destruction of the circuit pattern, improve the yield of the device to be produced, and improve the effect of processing ability
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first embodiment
[0033]FIG. 1 shows a schematic arrangement of the projection exposure apparatus of this embodiment. With reference to FIG. 1, a pattern formed on a reticle R is illuminated with an exposure light beam IL composed of an ultraviolet pulse light beam having a wavelength of 193 nm radiated from an illumination optical system 1 which includes, for example, an ArF excimer laser light source as an exposure light source, an optical integrator (homogenizer), a field diaphragm, and a condenser lens. The pattern on the reticle R is reduced and projected onto an exposure area on a wafer W coated with a photoresist at a predetermined projection magnification β (β is, for example, ¼ or ⅕) via a projection optical system PL which is telecentric on the both sides (or on one side on the side of the wafer W). Those appropriately usable as the exposure light beam IL include, for example, the KrF excimer laser beam (wavelength: 248 nm), the F2 laser beam (wavelength: 157 nm), and the i-ray (wavelength:...
second embodiment
[0055] Next, a second embodiment of the present invention will be explained with reference to FIG. 4. In the description of the second embodiment of the present invention, the constitutive components, which are the same as or equivalent to those of the first embodiment, are designated by the same reference numerals, any explanation of which will be omitted.
[0056]FIG. 4 shows the positional relationship among the end portion 4A of the lens 4 of the projection optical system PL shown in FIG. 1, and each two sets, i.e., four sets in total of the supply ports and the recovery ports which interpose the end portion 4A in the X direction and the Y direction. As shown in FIG. 4, an electrode member 44 is formed on the lower surface of the lens 4 in this embodiment. The electrode member 44 is a conductor which is formed by means of the vapor deposition on a part of the surface of the lens 4. The electrode member 44 is formed in a circular zonal form at the position at which the exposure lig...
third embodiment
[0058] Next, a third embodiment of the present invention will be explained with reference to FIG. 5. In this embodiment, the present invention is applied to a case of the exposure with a projection exposure apparatus based on the step-and-scan system, i.e., the so-called scanning type projection exposure apparatus. Also in this embodiment, the space between the lens 4 and the surface of the wafer W is filled with the liquid 7 during the scanning exposure by applying the liquid immersion method. The supply and the recovery of the liquid 7 are performed by a liquid supply unit 5 and a liquid recovery unit 6 respectively. The electricity is removed from the liquid 7 by electricity removal units 40, 41 provided for liquid supply pipings 21, 22. In the description of this embodiment, the constitutive components, which are the same as or equivalent to those of the first and second embodiments, are designated by the same reference numerals, any explanation of which will be omitted.
[0059]F...
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Abstract
Description
Claims
Application Information
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