Microlens structure

a microlens and structure technology, applied in the field of microlens and structure thereof, can solve the problems of limited market use of ccds, achieve the effect of minimizing problems, reducing costs, and minimizing distance between microlens and photodiodes

Inactive Publication Date: 2008-04-03
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The solution provides microlenses that can operate in high-temperature environments without fracturing, reduces costs by eliminating the need for additional passivation layers, and minimizes issues with oblique light beams by allowing for closer placement to photodiodes, enhancing the performance and efficiency of CMOS image sensors.

Problems solved by technology

CCDs use is limited in the market due to price and the volume considerations.

Method used

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  • Microlens structure
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Embodiment Construction

[0021] Please refer to FIG. 3 to FIG. 8. FIG. 3 to FIG. 8 shows schematic, cross-sectional diagrams illustrating a fabricating method of microlens in accordance with the first preferred embodiment of the present invention. As shown in FIG. 3, the present invention first provides a substrate 100 with a dielectric layer 102 thereon. The substrate 100 is a semiconductor substrate, but is not limited to a silicon wafer or a SOI, and the substrate 100 may include a plurality of light sensitization devices 96 such as photodiodes, etc., to receive the outside light beams and sensor the light intensity, and a plurality of insulators 98 such as shallow trench isolations (STIs), or local oxidation of silicon isolation layers (LOCOSs), etc., to avoid shorts and contact of the light sensitization devices 96 with MOS transistors and other devices. The light sensitization devices 96 are further electrically connected to CMOS transistors (not shown) such as reset transistors, current source follow...

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Abstract

The present invention provides a microlens structure for a semiconductor device, including a substrate with at least a dielectric layer thereon, at least a micro bump positioned on the dielectric layer surface, and an optical film on the micro bump surface and dielectric layer surface, the micro bump and the optical film being the microlens.

Description

CROSS REFERENCE TO RELATED APPLICATIONS [0001] This is a divisional application of U.S. patent application Ser. No. 11 / 464,824 filed on Aug. 15, 2006, and the contents of which are included herein by reference.BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention [0003] The present invention relates to a method of fabricating a microlens and a structure thereof, and more particularly, to a method of fabricating a microlens with an etching process and a structure thereof. [0004] 2. Description of the Prior Art [0005] CMOS image sensors (CISs) and charge-coupled devices (CCDs) are optical circuit components that represent light signals as digital signals. CISs and CCDs are used in the prior art. These two components widely applied to many devices, including: scanners, video cameras, and digital still cameras. CCDs use is limited in the market due to price and the volume considerations. As a result, CISs enjoy greater popularity in the market. [0006] The CIS is manufactured util...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): H01L31/0232G02B1/10
CPCB29D11/00365G02B3/0012G02B5/201G02B3/0056G02B3/0018
InventorLIAO, HO-SUNG
OwnerUNITED MICROELECTRONICS CORP