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Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method

a technology of silicon wafers and retaining assemblies, which is applied in the direction of grinding drives, manufacturing tools, lapping machines, etc., can solve the problems of deteriorating wafer flatness, unable to achieve sufficient flatness, and manufacturing processes that satisfy no restrictive flatness conditions, etc., and achieve the effect of overcoming the flatness deterioration of a wafer

Inactive Publication Date: 2009-06-11
LG SILTRON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a silicon wafer grinding apparatus and a method for correcting the flatness of a wafer after final grinding. The apparatus includes a grinding surface plate, a grinding head, and a retainer ring. A heterogeneous backing film is attached to the retainer ring and a retaining assembly. The method involves measuring the flatness of the wafer and manufacturing a secondary backing film based on the measurements. The apparatus and method provide advantages over existing grinding apparatus and methods for improving wafer flatness.

Problems solved by technology

However, there is a drawback in that these manufacturing processes satisfy no restrictive flatness conditions.
However, the wafer flatness is deteriorated in the final grinding after the dual-surface grinding process.
However, sufficient flatness has not yet been obtained.

Method used

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  • Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method
  • Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method
  • Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method

Examples

Experimental program
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Effect test

first exemplary embodiment

[0069]FIG. 3A is a partial cross-sectional view for schematically showing a retaining assembly used for a silicon wafer grinding apparatus according to an exemplary embodiment, and FIG. 3B is a plane view of FIG. 3A.

[0070]As shown in FIG. 3A and FIG. 3B, when a backing film 32 has a constant thickness, the center of a grinding head 25 is arrayed on the center of the backing film 32 which is attached thereon, the backing film 32 is formed by heterogeneously forming a center portion 32a and an edge portion 32b disposed apart from the center portion 32a so as to polish an edge portion of the wafer within the retainer ring 28 having an inner diameter (a wafer diameter+α) that is greater than a diameter of the wafer by as much as α. At this time, the center portion 32a and edge portion 32b may be formed of different materials having at least one different property of matter such as elastic coefficient and durability.

[0071]Since the retainer ring 28 has an inner diameter (a wafer diameter...

second exemplary embodiment

[0077]FIG. 4 is a partial cross-sectional view for schematically showing a retaining assembly used for a silicon wafer grinding apparatus according to another exemplary embodiment.

[0078]As shown in FIG. 4, when a backing film 42 surrounded by the retainer ring 28 is formed of the same material, the backing film 42 may have a different thickness at a predetermined portion thereof.

[0079]According to an exemplary embodiment, the backing film 42 may include an edge portion 42a near the inner wall of the retaining ring 28 and a land portion 42b at a center portion further away from the retainer ring 28 in comparison with the edge portion 42a.

[0080]It is preferable that the edge portion 42a has a width of from about 3 to about 5 mm (measured along a radial direction of the wafer) from the inner wall of the retainer ring 28, and the land portion 42b may include at least one stepped land portion having different heights in a radial direction.

[0081]That is, it is preferable that the edge po...

third exemplary embodiment

[0083]FIG. 5 is a partial cross-sectional view for schematically showing a retaining assembly used for a silicon wafer grinding apparatus according to yet another exemplary embodiment.

[0084]As shown in FIG. 5, when a backing film 52 surrounded by the retainer ring 28 is formed of one material, the backing film 52 may have at least one groove portion 52a along a circumference direction thereof.

[0085]According to an exemplary embodiment, the backing film 52 may include a groove portion 52a along a circumference direction and near to the inner wall of the retaining ring 28, and a land portion 52b having a predetermined height surrounded by the groove portion 52a.

[0086]The groove portion 52a is entirely formed along a thickness direction of the backing film 52, but this is not restrictive. The groove portion 52a may be formed only to the foaming layer or may be formed through the foaming layer to the substrate layer.

[0087]It is preferable that the groove portion 52a has a width of abou...

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Abstract

A silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method are provided.More particularly, a silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method for correcting a wafer flatness in a final grinding process are provided.The silicon wafer grinding apparatus includes a grinding surface plate having a grinding pad attached thereon; a grinding head arranged opposite to the grinding surface plate and rotated in the same direction as that of the grinding surface plate; a backing film attached at a lower portion of the grinding head for supporting a wafer; and a retainer ring having an inner diameter (a wafer diameter+α) greater than a diameter of the wafer by as much as α and disposed on the backing film.By forming a diameter or physical properties of a part of the backing film of the wafer retaining assembly, the wafer flatness of the final grinding may be corrected.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This is a divisional of U.S. application Ser. No. 11 / 612,008, which claims priority to and the benefit of Korean Patent Application No. 10-2005-0126460 & 10-2006-0103968 filed in the Korean Intellectual Property Office on Dec. 20, 2005 & Oct. 25, 2006 the entire contents of which are incorporated herein by reference.BACKGROUND[0002](a) Technical Field[0003]This disclosure relates to a silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method.[0004]More particularly, this disclosure relates to a silicon wafer grinding apparatus, a retaining assembly used for the same, and a silicon wafer flatness correcting method for correcting a wafer flatness in a final grinding process.[0005](b) Description of the Related Art[0006]A semiconductor technology has been developed in a higher integrated process so as to reduce production costs and to improve performance. Accordingly, a silicon w...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B7/22B24B41/06B24B37/04B24D99/00
CPCB24B37/30B24B37/042H01L21/304
Inventor MOON, DO MIN
Owner LG SILTRON