Silicon Wafer Grinding Apparatus, Retaining Assembly Used for the Same and Silicon Wafer Flatness Correcting Method
a technology of silicon wafers and retaining assemblies, which is applied in the direction of grinding drives, manufacturing tools, lapping machines, etc., can solve the problems of deteriorating wafer flatness, unable to achieve sufficient flatness, and manufacturing processes that satisfy no restrictive flatness conditions, etc., and achieve the effect of overcoming the flatness deterioration of a wafer
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first exemplary embodiment
[0069]FIG. 3A is a partial cross-sectional view for schematically showing a retaining assembly used for a silicon wafer grinding apparatus according to an exemplary embodiment, and FIG. 3B is a plane view of FIG. 3A.
[0070]As shown in FIG. 3A and FIG. 3B, when a backing film 32 has a constant thickness, the center of a grinding head 25 is arrayed on the center of the backing film 32 which is attached thereon, the backing film 32 is formed by heterogeneously forming a center portion 32a and an edge portion 32b disposed apart from the center portion 32a so as to polish an edge portion of the wafer within the retainer ring 28 having an inner diameter (a wafer diameter+α) that is greater than a diameter of the wafer by as much as α. At this time, the center portion 32a and edge portion 32b may be formed of different materials having at least one different property of matter such as elastic coefficient and durability.
[0071]Since the retainer ring 28 has an inner diameter (a wafer diameter...
second exemplary embodiment
[0077]FIG. 4 is a partial cross-sectional view for schematically showing a retaining assembly used for a silicon wafer grinding apparatus according to another exemplary embodiment.
[0078]As shown in FIG. 4, when a backing film 42 surrounded by the retainer ring 28 is formed of the same material, the backing film 42 may have a different thickness at a predetermined portion thereof.
[0079]According to an exemplary embodiment, the backing film 42 may include an edge portion 42a near the inner wall of the retaining ring 28 and a land portion 42b at a center portion further away from the retainer ring 28 in comparison with the edge portion 42a.
[0080]It is preferable that the edge portion 42a has a width of from about 3 to about 5 mm (measured along a radial direction of the wafer) from the inner wall of the retainer ring 28, and the land portion 42b may include at least one stepped land portion having different heights in a radial direction.
[0081]That is, it is preferable that the edge po...
third exemplary embodiment
[0083]FIG. 5 is a partial cross-sectional view for schematically showing a retaining assembly used for a silicon wafer grinding apparatus according to yet another exemplary embodiment.
[0084]As shown in FIG. 5, when a backing film 52 surrounded by the retainer ring 28 is formed of one material, the backing film 52 may have at least one groove portion 52a along a circumference direction thereof.
[0085]According to an exemplary embodiment, the backing film 52 may include a groove portion 52a along a circumference direction and near to the inner wall of the retaining ring 28, and a land portion 52b having a predetermined height surrounded by the groove portion 52a.
[0086]The groove portion 52a is entirely formed along a thickness direction of the backing film 52, but this is not restrictive. The groove portion 52a may be formed only to the foaming layer or may be formed through the foaming layer to the substrate layer.
[0087]It is preferable that the groove portion 52a has a width of abou...
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