Plasma arrestor insert

Abstract

A dielectric arrestor insert for use in a chamber wafer processing system having a gas input line, an arrestor housing and a wafer processing space. The input line is able to provide gas to the arrestor housing. The arrestor housing is able to house the dielectric arrestor insert. The dielectric arrestor insert comprises a gas entry portion, a non-linear channel and a gas exit portion. The gas entry portion is arranged to receive the gas from the input line. The non-linear channel is arranged to deliver the gas from the gas entry portion to the gas exit portion. The gas exit portion is arranged to deliver the gas from the non-linear channel to the wafer processing space.

Description

[0001]The present application claims benefit under 35 U.S.C. §119 (e) to U.S. provisional patent application 61 / 165,270, filed Mar. 31, 2009, the entire disclosure of which is incorporated herein by reference.BACKGROUND[0002]The semiconductor manufacturing industry places increased emphasis on cost savings and efficiency to increase a constantly dwindling profit margin. One important effort to drive costs lower is to preserve components within a system that requires extremely high ion energy at the substrate surface when using helium based plasma to complete the required etching process. To create this high ion energy at the substrate surface, a high voltage is applied at the substrate surface, which creates a large electrical field gradient extending back into the helium supply line, which in turn creates unwanted electrical arcing between surfaces and generates plasma in the supply lines and other components. This produces adverse effects such as pitting and melting of the supply ...

AI Technical Summary

Benefits of technology

The present invention provides a dielectric arrestor insert that reduces the likelihood of arcing and plasma generation in a chamber wafer processing system. The insert includes a gas entry portion, a non-linear channel, and a gas exit portion. The gas entry portion receives gas from the input line, the non-linear channel delivers the gas to the gas exit portion, and the gas exit portion delivers the gas to the wafer processing space. This design helps to prevent damage to the wafer caused by plasma and other harmful substances.

Problems solved by technology

This produces adverse effects such as pitting and melting of the supply lines.

However, such electrical insulators increase cost of ownership.

If electrical arcing occurs, damage to bowl components can occur.

A problem with this tactic is that decreasing the width d1 and depth d2 of longitudinal channel 212 of dielectric arrestor insert 106 will increase the pressure drop across the components, and that will decrease the amount of helium supplied into wafer processing system 112.

However, arcing or light-up potential can be an issue if the increased length comes in the form of a longer, line-of-site path.

As such, in system 100, this is not a viable option.

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