Method for producing group iii nitride wafers and group iii nitride wafers
a technology of nitride and nitride, which is applied in the direction of polycrystalline material growth, single crystal growth, after-treatment, etc., can solve the problems of deteriorating the efficiency of light emitting devices grown on such wafers, difficult to grow group iii nitride crystal ingots, and affecting the realization of high-end optical and electronic devices, so as to avoid dissociation and/or decomposition of pieces and improve the transparency of pieces
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example 1
[0044]In this example, a reaction vessel having an inner diameter of 1 inch was used for the ammonothermal growth. All necessary sources and internal components including 10 g of polycrystalline GaN nutrient held in Ni mesh basket, 0.3 mm-thick single crystalline GaN seeds, and three baffles, which acts as a flow restriction device were loaded into a glove box together with the reaction vessel. The glove box is filled with nitrogen and the oxygen and moisture concentration is maintained to be less than 1 ppm. Since the mineralizers are reactive with oxygen and moisture, the mineralizers are stored in the glove box all the time. 4 g of as-received NaNH2 was used as a mineralizer. After loading mineralizer into the reaction vessel, three baffles together with seeds and nutrient are loaded. After closing the lid of the reaction vessel, it was taken out of the glove box. Then, the reaction vessel is connected to a gas / vacuum system, which can pump down the vessel as well as can supply N...
example 2
[0047]In this example a GaN ingot was formed by the same method as described in Example 1. The GaN ingot was sliced into 0.4 mm-thick wafers with a wire saw. Then 6 wafers were annealed at different temperatures (500, 700, 900, 1100, 1200, and 1300° C. in NH3 ambient for 1 hour) by the following process.
[0048]A wafer was placed into a reactor. After evacuating air in the reactor, a forming gas (4% H2 / 96% N2) was introduced into the reactor, and subsequently the reactor was heated. At 485° C., ammonia was introduced to the reactor to suppress dissociation or decomposition of the GaN. The flow rate of ammonia and the forming gas was 1 slm and 1.1 slm, respectively. During annealing both the Ga-face and the N-face of each wafer was exposed to the ambient gas. When the GaN wafer was annealed at 1300° C., the surface of the wafer was etched away. Therefore, if ammonia is used to suppress dissociation or decomposition, the temperature is typically less than 1300° C. to avoid surface etchi...
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