The invention relates to the technical field of porous
graphite preparation, in particular to a preparation method of
fiber porous
graphite for
semiconductor-grade
silicon carbide crystal growth, which comprises the following steps: S1, carbon
fiber pretreatment: selecting high-purity PAN (
polyacrylonitrile)-based fibers or
pitch-based fibers as raw materials, placing the long-
fiber raw materials on a high-precision shearing
machine, and shearing to obtain
carbon fibers; the method comprises the following steps:
cutting short-filament fiber bundles with the length of 30-50mm into short-filament fiber bundles, uniformly putting the
cut short-filament fiber bundles into a fiber beater which is provided with a toothed claw-shaped structure rotating at a high speed, and mechanically beating the fiber bundles at the rotating speed of 1500-2000r / min by the toothed claw-shaped structure under the driving of a high-power motor, a natural pore structure formed by a carbon fiber bridge is used as a pore-forming mode of porous
graphite, a pore-forming agent does not need to be added, and due to the fact that the
diameter of
carbon fibers is consistent, the pore size of formed pores and the proportion of the formed pores can be accurately controlled by controlling the dispersion degree of the fibers.