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Vacuum processing apparatus and method of using the same

A vacuum treatment and vacuum technology, applied in vacuum evaporation plating, ion implantation plating, gaseous chemical plating, etc., can solve problems such as inability to remove particles, decrease in system utilization, inability to remove impurities, etc.

Inactive Publication Date: 2008-09-10
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, although the ULPA filter can prevent the entry of impurities from the outside of the system to a certain extent, it cannot remove the impurities generated inside the system.
In addition, this filter cannot remove particles with a diameter below 0.1 μm
In addition, ammonia and volatile organic compounds can only be removed by chemical filters
Moreover, due to the life of the filter itself, it needs to be maintained frequently, therefore, it will cause a decrease in the utilization rate of the system

Method used

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  • Vacuum processing apparatus and method of using the same
  • Vacuum processing apparatus and method of using the same
  • Vacuum processing apparatus and method of using the same

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Embodiment Construction

[0042] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, in the following description, the same code|symbol is attached|subjected to the component which has substantially the same function and structure, and it repeats description only when necessary.

[0043] (Semiconductor processing system of the first embodiment)

[0044] figure 1 It is a plan view showing the layout of the semiconductor processing system according to the first embodiment of the present invention. The semiconductor processing system 1 is a multi-chamber structure having a plurality of monolithic processing chambers. Each processing chamber is configured to house semiconductor wafers W as objects to be processed one by one and to perform semiconductor processing thereon in a vacuum atmosphere. The operation of the semiconductor processing system 1 is controlled by the CPU 2 .

[0045] Specifically, in this embodiment, the processing system 1 inc...

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Abstract

A vacuum processing system includes a process chamber configured to accommodate a target object and perform a process thereon under a vacuum environment. The process chamber is provided with an exhaust system and a gas supply system. An ion generator configured to generate minus ions is disposed in a space outside the process chamber. The space is arranged to selectively communicate with the interior of the process chamber. A negative charge applicator is configured to form a negatively charged state of the target object within the process chamber.

Description

technical field [0001] This invention relates to vacuum processing systems and methods for their use, and more particularly to techniques used in semiconductor processing. Here, the so-called semiconductor processing refers to forming semiconductor layers, insulating layers, conductive Various processes are carried out to manufacture semiconductor devices, structures including wiring and electrodes connected to the semiconductor devices, etc., on the object to be processed. Background technique [0002] In the manufacturing process of semiconductor devices, in order to efficiently process semiconductor wafers, a multi-chamber semiconductor processing system composed of a plurality of monolithic chambers is widely used. In such a semiconductor processing system, a semiconductor wafer is moved between chambers under vacuum conditions isolated from the outside. As a result, impurities such as particles can be prevented from entering the processing system from the outside to a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/02H01L21/3065H01L21/31C23C16/44C23C14/22C23F4/00
Inventor 齐藤美佐子林辉幸小宫隆行
Owner TOKYO ELECTRON LTD