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Plasma processing apparatus

A plasma and processing device technology, which is applied in the field of plasma processing devices, can solve the problems of difficult sputtering etching of generated reactants, high difficulty, etc.

Inactive Publication Date: 2008-12-10
MITSUBISHI HEAVY IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the conventional plasma processing device 10 described above, it is extremely difficult to sputter etch the generated reactants in a uniform amount, and the larger the diameter of the substrate 1, the higher the difficulty.

Method used

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no. 1 Embodiment approach

[0026] according to Figure 1 to Figure 4 A first embodiment of the plasma processing apparatus of the present invention will be described. figure 1 is a schematic configuration diagram of a plasma processing apparatus; figure 2 yes figure 1 An explanatory diagram of the main parts of the plasma processing apparatus; image 3 A in is the uniform deposition map, which is stored in figure 1 In the control device of the plasma processing device, B is a uniform sputter etching map, which is stored in figure 1 In the control device of the plasma processing device; Figure 4 It is a flowchart showing the procedure of the plasma processing method.

[0027] Such as figure 1 As shown, an elevating device 121 as an elevating mechanism is provided below the inside of a cylindrical vacuum reaction chamber 111 to which an exhausting mechanism, ie, an exhausting pump 112, is connected. In the lifting device 121 , a disk-shaped support table 113 for supporting the substrate 1 is...

no. 2 Embodiment approach

[0042] Figure 5 to Figure 7 It is a schematic representation of the plasma processing apparatus related to the second embodiment of the present invention. Figure 5 is a schematic configuration diagram of a plasma processing apparatus, Figure 6 yes Figure 5 An explanatory diagram of the main parts of the plasma processing equipment, Figure 7 It is a flowchart showing the procedure of the plasma processing method. Furthermore, regarding the parts that are the same as those of the above-mentioned first embodiment, since the symbols used here are the same as those used in the above-mentioned first embodiment, the parts that overlap with the description of the above-mentioned first embodiment will be omitted here. .

[0043] Such as Figure 5 As shown, the inner bottom surface of the vacuum reaction chamber 111 is provided with a cylindrical support platform 213 for supporting the substrate 1 , which is arranged coaxially with the vacuum reaction chamber 111 . On the top...

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Abstract

A plasma processing device, when the size of a substrate (1) is indicated, the relationship between the diameter dimension Dp of the high-density plasma region and the height H between the center of the high-density plasma region and the lower part of the plasma diffusion region is read out The figure of the uniform sputter etching range; According to the internal pressure and the electromagnetic wave frequency from the antenna (116), obtain the height Hp between the center of the high-density plasma region and the inside of the vacuum reaction chamber (111) and the above-mentioned Dp value; according to the internal pressure and the self-supplied bias potential of the substrate (1), obtain the height Hs between the bottom of the plasma diffusion region and the top of the supporting table (113); After obtaining the above-mentioned H value that can become a uniform sputter etching range from the above-mentioned figure, control the lifting device (121) so as to achieve the above-mentioned H value.

Description

technical field [0001] The present invention relates to a plasma processing device for generating plasma and processing the surface of a substrate. Background technique [0002] Figure 8 An example of a conventional plasma processing apparatus that generates plasma and processes a substrate surface is shown. [0003] Such as Figure 8 As shown, a cylindrical vacuum reaction chamber 11 is connected with an exhaust pump 12 , and the inner bottom surface of the vacuum reaction chamber 11 is provided with a cylindrical support platform 13 for supporting the substrate 1 , which is arranged coaxially with the vacuum reaction chamber 11 . Above the above-mentioned support table 13 inside the vacuum reaction chamber 11, a plurality of main supply nozzles 14 are arranged at fixed intervals in the circumferential direction of the vacuum reaction chamber 11, and the front ends of the main supply nozzles 14 face the axial center of the vacuum reaction chamber 11. , transporting silane...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01L21/3065
CPCH01J37/32009H01J37/32568H01J37/32935H01L22/20H01L21/3065H01L21/02
Inventor 松田竜一井上雅彦
Owner MITSUBISHI HEAVY IND LTD
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