Memory device detecting method

Abstract

The invention discloses a test method for a storage, which mainly includes three test stages which are respectively read-write test, data wire test and address wire test and search for errors existedin the storage through step-by-step exclusive method which makes test results more accurately. Besides, the invention only needs utilizing the initial address and the final address to comprehensivelydetect whether the data wire has problems; and for detecting the address wire, the comprehensive test can be performed only by utilizing very few address locations. Moreover, through special arrangement of test data, test data groups and test address blocks, specific data wire and address wire on which an error is existed can be pointed out and the error can be reported in time, thereby greatly improving detection efficiency.

Description

technical field [0001] The invention relates to the technical field of detecting memory peripheral circuits and memory quality, in particular to a detection method for memory circuit short circuit and disconnection and unit. Background technique [0002] Memory has been widely used in various products in the computer, electronics, and communication industries. Moreover, memory has high requirements for production technology (such as mounting technology). In the case of human factors (such as soldering errors, causing problems such as false soldering and adhesion), the memory often has short-circuit or open-circuit problems, which has a great impact on the product and often makes the product unable to operate normally. However, such problems are usually difficult to judge by the naked eye of technicians, and software problems caused by such hardware problems are not easy to locate and difficult to reproduce. [0003] The Chinese patent CN200410069098.2 "Detection method of f...

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Problems solved by technology

[0002] Memory has been widely used in various products in the computer, electronics, and communication industries. Moreover, memory has high requirements for production technology (such as mounting technology). In the case of human factors (such as soldering errors, causing problems such as virtual soldering and adhesion), the memory often has short-circuit or open-circuit problems, which has a great impact on the product and often makes the product unable to operate normally

However, such problems are usually difficult to judge by the naked eye of technicians, and software problems caused by such hardware problems are not easy to locate and difficult to reproduce

[0003] The Chinese patent CN200410069098.2 "Detection method of flash memory" published on January 26, 2006 proposes a technical solution for open circuit and short circuit detection of FLASH, which reads and writes each address unit of FLASH operation to determine whether there is a problem with the address unit. Since the FLASH write operation takes a long time, all address units are written, which greatly increases the detection time; The detection process is very cumbersome and the detection results are not accurate, because the read results are inconsistent with the written results, it is not necessarily a problem with the data line, it may also be a problem with the address line or the memory unit

Similarly, the process of detecting the open circuit and short circuit of the address line in this scheme is also very complicated and the detection result is inaccurate

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