Light emitting element and communication device using same
A technology of light-emitting elements and communication devices, which is applied in the direction of electrical components, nano optics, semiconductor devices, etc., and can solve the problems of reduced emission intensity, insufficient responsiveness of communication light-emitting elements, and unsuitability for high-speed optical communication.
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no. 1 approach
[0053] FIG. 1 is a schematic diagram showing a communication device 100 using a light emitting element in a first preferred embodiment of the present invention.
[0054] The communication device 100 includes a light emitting unit 10 for outputting signal light, a light receiving unit 20 for receiving signal light, and a POF (plastic optical fiber) 30 which is an optical transmission line connecting the light emitting unit 10 and the light receiving unit 20, to allow optical communication between them.
[0055] The light emitting unit 10 includes a signal processing section 11 to which an input signal for optical transmission is input from the outside, and a light emitting element 12 formed of a GaN-based semiconductor and based on a current supplied from the signal processing section 11 Light based on the input signal is emitted to the POF 30 . GaN-based semiconductors are represented by the following general formula: Al x Ga y In 1-x-y N (0≤X≤1, 0≤Y≤1, 0≤X+Y≤1), and inclu...
no. 2 approach
[0081] Fig. 5A is a schematic sectional view showing a light emitting element in a second embodiment of the present invention. Fig. 5B is a partially enlarged cross-sectional view showing a SQW (single quantum well) in Fig. 5A.
[0082] The light emitting element 12 of the second embodiment differs from the first embodiment in that, as shown in FIG. 5B , the In in the SQW 104 0.15 Ga 0.85 A 7 nm-thick Si-doped GaN layer 141 is formed in GaN barrier layer 104B at the interface between N well layer 104A and GaN barrier layer 104B adjacent to n-type GaN layer 103 .
[0083] 6A and 6B illustrate the mechanism of canceling the piezoelectric field in the light-emitting element of the second embodiment, wherein FIG. 6A is a schematic diagram illustrating an SQW that generates a piezoelectric field, and FIG. 6B is a schematic diagram illustrating an SQW that provides a Mg-doped GaN layer. .
[0084] As shown in Figure 6A, when the InGaN layer (=In 0.15 Ga 0.85 When the N well lay...
no. 3 approach
[0102] Fig. 12A is a schematic sectional view showing a light emitting element in a third preferred embodiment of the present invention. Fig. 12B is a partially enlarged cross-sectional view showing a SQW (single quantum well) in Fig. 12A;
[0103] The light emitting element 12 of the third embodiment differs from the first embodiment in that, in the SQW 104 shown in FIG. 12B , in the In 0.15 Ga 0.85 A 3 nm thick Mg-doped GaN layer 140 is formed at the interface between the N well layer 104A and the GaN barrier layer 104B adjacent to the p-type AlGaN layer 105, and the In 0.15 Ga 0.85 A 3 nm thick Si-doped GaN layer 141 is formed at the interface between the N well layer 104A and the GaN barrier layer 104B adjacent to the n-type GaN layer 103 .
[0104] Effect of the third embodiment
[0105] In the third embodiment, the Mg-doped GaN layer 140 is formed at the interface between the InGaN well layer 104A and the GaN barrier layer 104B adjacent to the p-type layer, and the S...
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