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Multi-gas distribution injector for chemical vapor deposition reactors

A chemical vapor deposition and gas distribution technology, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as output reduction and cost increase

Inactive Publication Date: 2007-12-19
VEECO INSTR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This can result in lower yields and increased costs

Method used

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  • Multi-gas distribution injector for chemical vapor deposition reactors
  • Multi-gas distribution injector for chemical vapor deposition reactors
  • Multi-gas distribution injector for chemical vapor deposition reactors

Examples

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Embodiment Construction

[0058] Referring now to the drawings, in which like numerals refer to like elements, Figure 1 shows a rotating disk reactor including a multi-gas injector according to an embodiment of the present invention.

[0059] As shown schematically in FIG. 1, the apparatus comprises a cylindrical reaction chamber made of stainless steel walls 105, a bottom plate 110, exhaust ports 115, and a vacuum through-hole feedthrough that seals the rotation of a rotating mandrel 125. 100, a wafer carrier 130 with a base wafer 135 is mounted on top of the mandrel. The wafer carrier is rotatable about an axis 137 (α) coaxial with the cylindrical chamber 100 at a predetermined rotational speed (β).

[0060] A heating base 145 is heated by a set of heating elements 140. The heating elements are usually made of refractable metals, such as but not limited to molybdenum, tungsten or rhenium, or non-metals such as graphite, which can be divided into multiple Heated area. The metal used for the heating ...

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Abstract

A gas distribution injector for chemical vapor deposition reactors has precursor gas inlets disposed at spaced-apart locations on an inner surface facing downstream toward a substrate carrier, and has carrier openings disposed between the precursor gas inlets. One or more precursor gases are introduced through the precursor gas inlets, and a carrier gas substantially nonreactive with the precursor gases is introduced through the carrier gas openings. The carrier gas minimizes deposit formation on the injector. The carrier gas openings may be provided by a porous plate defining the surface or via carrier inlets interspersed between precursor inlets. The gas inlets may removable or coaxial.

Description

[0001] related application [0002] This application claims priority to US Provisional Patent Application Serial No. 60 / 598,172, filed August 2, 2004, which is incorporated herein by reference. technical field [0003] The present invention relates to systems for gas phase processes of reactive gases such as chemical vapor deposition, and more particularly to multiple gas distribution injectors for such reactors. Background technique [0004] Chemical vapor deposition ("CVD") reactors allow processing of wafers mounted on a wafer carrier placed within a reaction chamber. A so-called gas distribution injector, such as that sold by the assignee of the present application under the trade name FLOWFLANGE, mounts facing the wafer carrier. The injector typically includes multiple gas inlets that provide some combination of one or more precursor gases to the chamber for chemical vapor deposition. Certain gas distribution injectors provide a shielding gas or carrier gas which ass...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/00C23F1/00
CPCC23C16/45565C23C16/45574C23C16/45572C23C16/00
Inventor E·A·阿穆尔A·谷拉瑞L·卡丁斯基R·多普哈莫G·S·唐帕M·凯兹
Owner VEECO INSTR
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