Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for forming a photoresist pattern

A technology of photoresist pattern and photoresist, which is applied in microlithography exposure equipment, photosensitive material processing, photoplate making process exposure device, etc., can solve problems such as photoresist residue, reduce defects, eliminate residue, Reduce the effect of volatilization

Inactive Publication Date: 2010-06-16
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Therefore, the object of the present invention is to provide a kind of method for forming photoresist pattern, to solve the problem that the photoresist residue produced by the action of nitrogen or ammonia in the existing dielectric layer or etching stop layer and photoresist

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming a photoresist pattern
  • Method for forming a photoresist pattern
  • Method for forming a photoresist pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0029] In the present invention, before the photoresist is spin-coated, at first the base surface is baked at high temperature, and the free ammonia and nitrogen in the base surface and the base dielectric layer are removed by baking, and the ammonia, nitrogen and nitrogen in the dielectric layer are reduced or eliminated. The residue generated by the action of photoresist.

[0030] Figure 11 It is a flow chart according to a method embodiment of the present invention.

[0031] Such as Figure 11 As shown, a semiconductor substrate is firstly provided, in which a device layer, such as a metal oxide semiconductor transistor, is formed, and a first dielectric layer is formed on the semiconductor substrate, and the first dielectric lay...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method to form adhesive photo-etch patterns comprises a semiconductor substrate, a first dielectric layer and a second dielectric layer. Wherein, a connecting hole is formed in the first dielectriclayer and the second dielectric layer. The semiconductor provided with the connecting hole is roasted. A sacrificial layer is formed in the connecting hole and on the second dielectric layer. Photo-etch adhesives are rotationally spread on the sacrificial layer to form grooved patterns. The method can reduce or eliminate residues while forming grooved photo-etch patterns.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a photoresist pattern. Background technique [0002] With the development of semiconductor manufacturing technology, the line width is getting smaller and smaller, the error of the line width of the photoresist pattern and the influence of the defect of the photoresist pattern on the electrical properties of the chip manufacturing process are becoming more and more obvious. How to reduce photolithographic pattern defects in the photolithography process is a problem that craftsmen have to consider. [0003] In photolithography, the photoresist is first uniformly coated on the surface of the wafer by spin coating, and then the pattern on the mask plate is transferred to the wafer by exposure and development, and in this process, a series of Bake processes such as soft bake and post exposure bake to increase the adhesion between the photores...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/16G03F7/20G03F7/26H01L21/00
Inventor 汪钉崇蓝受龙
Owner SEMICON MFG INT (SHANGHAI) CORP