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Power-on circuit

A circuit and voltage technology used in the field of energized circuits

Inactive Publication Date: 2012-09-19
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, when the I / O voltage and chip internal voltage (hereinafter referred to as "core voltage") are used independently in the RPIO scheme, a power-on circuit (POC) may be required

Method used

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Examples

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Embodiment Construction

[0017] Such as figure 2 For example, the power-on circuit according to an embodiment may include at least one of the following: an input / output (I / O) voltage detector 210 that outputs an I / O voltage detection signal PURST0 in response to an I / O voltage DVDD detector 210; The core voltage detector 220 which outputs the core voltage detection signal ND13 from the core voltage VDD; the power-on signal generator 230 which receives the I / O voltage detection signal PURST0 and the core voltage detection signal ND13 and outputs the power-on signal POCRST in response to PURST0 and ND13.

[0018] image 3 A circuit diagram of the I / O voltage detector 210 according to the embodiment is illustrated. The I / O voltage detector 210 may include a capacitor C2 that may boost the voltage of the gate terminal (node ​​ND21 ) of the fifth n-channel metal oxide semiconductor (NMOS) transistor NH5 when the I / O voltage DVDD is applied. The I / O voltage detector 210 may include a fifth NMOS transisto...

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PUM

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Abstract

A power-on circuit which may generate a power-on signal that is insensitive to the rising speed of an I / O voltage or core voltage. A power-on signal may be generated according to current drive capabilities of NMOS and PMOS transistors based on the I / O voltage or core voltage. A power-on circuit may control an I / O voltage when the level of a core voltage is lower than the I / O voltage.

Description

[0001] This application claims the benefit of Korean Patent Application No. 10-2006-0088445 filed September 13, 2006, the entire contents of which are incorporated herein by reference. technical field [0002] The present invention relates to a power-on circuit, and more particularly, to a method for generating power-on circuits independent of I / O voltage or core voltage based on the current drive capability of NMOS and PMOS transistors based on I / O voltage or core voltage. The rate of rise of the core voltage affects the energization signal of the energization circuit. Background technique [0003] A semiconductor chip may go through a series of initialization procedures when it starts up, including applying an external voltage to the semiconductor chip. During startup, since the state of the input / output (I / O) terminals of the chip is unknown, the Retention Programmable Input Output (ORPIO) scheme can be used to avoid having data with another system connected to the chip. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K5/24H03K17/687
CPCH03K17/6872H03K17/302H03K2217/0036H03K17/223H01L2924/0002H01L2924/00G06F1/1601G06F1/181G06F1/189
Inventor 安文源
Owner DONGBU HITEK CO LTD
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