Low-electric-conductivity and gray track resistant Rb:KTP crystal and method for preparing same

A low-conductivity, anti-ashing technology, applied in crystal growth, chemical instruments and methods, self-solidification methods, etc., can solve problems such as loss of function, KTP crystal device damage, etc., to achieve stable absorption coefficient and good anti-ashing performance Effect

Inactive Publication Date: 2008-11-26
BRIGHT CRYSTALS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the conductivity of the crystal is high, it is easy to cause the KTP crystal device to be damaged and lose its proper function.

Method used

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  • Low-electric-conductivity and gray track resistant Rb:KTP crystal and method for preparing same

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The embodiment of the present invention provides a kind of low electrical conductivity, anti-ash trace Rb:KTP crystal, the chemical formula of this crystal is Rb x K (1-x) TiOPO 4 , 0.01+ By Rb + Except for substitution, its unit cell structure is basically the same as ordinary KTP.

[0026] to normal K 6 P 4 o 13 (hereinafter referred to as K6) KTiOPO of flux system 4 (hereinafter referred to as KTP) growth was modified by doping, and the Rb + 、Cs + , Ga 3+ 、Al 3+ Doping modification experiments with various ions, and found that Rb + Doping modification also has the characteristics of low conductivity in the Z direction and good anti-blue-green gray staining effect. Further experiments show that Rb + Effect of doping content on crystal properties, final determination of low Rb + The doping content has the most significant improvement on the gray stain resistance of KTP crystals. Rb + As an alternative ion to replace part of K in KTP + position, due to th...

Embodiment 2

[0030] Embodiments of the present invention provide a method for preparing low-conductivity, anti-ash stain Rb:KTP crystals, comprising the following steps:

[0031]1) Add rubidium carbonate to the raw material system of growing KTP with K6 as flux and stir evenly to make Rb:KTP crystal raw material;

[0032] The specific steps are:

[0033] Add rubidium carbonate to the mixture of potassium dihydrogen phosphate, titanium dioxide and dipotassium hydrogen phosphate and stir well. The potassium dihydrogen phosphate, titanium dioxide and dipotassium hydrogen phosphate are added in a ratio of 1.345:1 (this is the optimal ratio) after the reaction to form KTP and K6 molar ratio. The rubidium carbonate is added in a ratio of 1% by weight to the mixture of potassium dihydrogen phosphate, titanium dioxide and dipotassium hydrogen phosphate.

[0034] 2) Put the made Rb:KTP crystal raw material into a platinum or gold crucible for heating and melting and then cool down to the saturati...

Embodiment 3

[0056] Embodiments of the present invention provide a method for preparing low-conductivity, anti-ash stain Rb:KTP crystals, comprising the following steps:

[0057] 1) Add rubidium carbonate to the raw material system of growing KTP with K6 as flux and stir evenly to make Rb:KTP crystal raw material;

[0058] The specific steps are:

[0059] Add rubidium carbonate to the mixture of potassium dihydrogen phosphate, titanium dioxide and dipotassium hydrogen phosphate and stir well. The potassium dihydrogen phosphate, titanium dioxide and dipotassium hydrogen phosphate are added according to the molar ratio of KTP and K6 formed after the reaction is 1.186:1. The rubidium carbonate is added in a ratio of 2.7% by weight to the mixture of potassium dihydrogen phosphate, titanium dioxide and dipotassium hydrogen phosphate.

[0060] 2) Put the made Rb:KTP crystal raw material into a platinum or gold crucible for heating and melting and then cool down to the saturation point;

[006...

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Abstract

The invention discloses Rb:KTP crystal with low conductivity and gray track resistance, the chemical formula of the crystal is RbxK(1-x)TiOPO4, wherein, x is more than 0.01 and less than 0.1. The invention also discloses a preparation method for the Rb:KTP crystal with the low conductivity and the gray track resistance, which comprises following procedures: rubidium oxide is added into a raw material system for growing KTP, wherein, K6 is taken as a fusing assistant and then the mixture is stirred evenly, thus obtaining the Rb:KTP crystal raw material; the obtained Rb:KTP crystal raw material is put in a crucible to be heated, melted and then cooled to a saturation point; seed crystal is added into the melted raw material to lead the Rb:KTP crystal to grow along the seed crystal. Compared with KTP crystal, the Rb:KTP crystal disclosed by the invention has the very low conductivity, can meet the conductivity requirement of an electro-optical device and can not be damaged as the crystal is blackened or denatured under the action of a high electric field; the absorption coefficient of the crystal is comparatively stable; after the testing by experiments, the crystal of the invention has excellent gray track resistance.

Description

technical field [0001] The present invention relates to a kind of doped Rb + A KTP (Rb:KTP) crystal and a preparation method thereof, in particular to a low-conductivity, gray-stain-resistant Rb:KTP crystal and a preparation method thereof. Background technique [0002] With the development of laser technology, many new nonlinear optical crystals have been discovered, among which potassium titanyl phosphate crystal is the most striking and still widely used. [0003] Potassium titanyl phosphate (KTiOPO 4 KTP for short) crystal is an internationally recognized nonlinear optical crystal with superior comprehensive performance. It has the advantages of large nonlinear coefficient, good optical uniformity, good thermal conductivity, wide transmission band, etc., and has good physical, chemical and mechanical properties. It is currently one of the best materials for 1.06μm frequency doubling of medium and small power neodymium lasers one. It is widely used in laser medical tr...

Claims

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Application Information

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IPC IPC(8): C30B29/14C30B29/22C30B11/00G02B1/02H01S3/16
Inventor师瑞泽胡永岚肖亚波葛世艳高山虎王国影尹利君王忠何庭秋
OwnerBRIGHT CRYSTALS TECH