10 results about "Flux system" patented technology

A flux system includes a memory and a processor in communication with the memory and a sensing device, the memory storing a plurality of capabilities and a plurality of semantic fluxes associated with the plurality of capabilities. The computing system is configured to infer a semantic based on received inputs and to infer an activity interest semantic based on an input, and to assign at least one augmentation servicing agent to service an activity interest based on semantic matching.

The utility model relates to the technical field of motor processing devices, specifically a circulating flux supply system, including an overflow part with an overflow cavity, a feed distribution part with a distribution cavity provided in the overflow cavity, a flux holding part with a flux cavity provided in the distribution cavity; an annular overflow groove is formed between the feed distribution part and the overflow cavity, an annular feed distribution groove is formed between the flux holding part and the distribution cavity, and a plurality of distribution holes are provided on the side of the flux holding part; an overflow reflux interface and a first feed port are provided on the bottom plate of the overflow part, and a second feed port corresponding to the first feed port is provided on the bottom wall of the feed distribution part; and a flux supply component is also provided, which is used to input flux to the first feed port, and is used to recycle the flux refluxed through the overflow reflux interface. The system is not only simple in structure and occupies a small space, but also realizes the circulating supply of flux, which can effectively improve welding efficiency while effectively reducing manual dependence.

The invention discloses a high-quality gallium nitride crystal and a fluxing agent growth method and application thereof. The growth method comprises the steps that a first fluxing agent system is adopted for primary growth to obtain an intermediate crystal, a plurality of gallium nitride nanowires are formed on the growth face of the intermediate crystal to form a nanowire template layer, and the first fluxing agent system contains metal nickel; a second fluxing agent system is adopted, secondary growth is carried out on the basis of the middle crystal, a combined growth layer which grows outwards in a combined mode from the nanowire template layer is formed, and finally the high-quality gallium nitride crystal is obtained. According to the method, the crystal growth is realized by adopting a two-step fluxing agent method, the gallium nitride nanowires are formed by utilizing the catalytic action of metal nickel during the first growth, the nanowire template layer formed by the gallium nitride nanowires has the characteristics of compactness and uniformity, and the gallium nitride crystal obtained by carrying out the secondary growth based on the nanowire template layer is uniform in growth and high in yield. The dislocation density of regrown gallium nitride is reduced more effectively, and the stress is reduced at the same time.

This invention relates to a flux and a method for growing β-Ga₂O₃ crystals. The invention uses LiBO₂-metal fluoride as a composite flux system for β-Ga₂O₃ crystal growth, with a molar ratio of LiBO₂ to metal fluoride of 1–0.8:0.04–0.2, and a crystal growth temperature range of 700–1000℃. Compared with existing technologies, the flux system proposed in this invention does not contain toxic or harmful components such as PbO and PbSO₄ commonly used in high-temperature fluxes. It can significantly reduce the saturation temperature of β-Ga₂O₃ crystals, improve the stability of the growth system, and the metal fluoride can effectively break the B-O bond chain. The solvent viscosity is low, avoiding the formation of inclusions and facilitating the acquisition of high-quality β-Ga₂O₃ crystals.

The invention relates to a method for improving soldering flux components based on a thermodynamic activity model of the soldering flux components. The method comprises the steps that a target welding flux system and the total mole number of all components before reaction are determined; determining a structural unit of the soldering flux by referring to the related phase diagram and literature; setting component activity and related parameters; a welding slag activity calculation model is established according to the mass balance relation and the chemical reaction balance principle; scientific calculation software is used for programming calculation, and the final components of the welding flux during welding seam forming are controlled by adjusting the initial components. The method is suitable for various welding flux systems, welding appearance forming can be effectively improved, the internal defect rate of welding seams is reduced, and wide universality and practicability are achieved. By optimizing the components of the welding flux, a scientific and efficient improvement method is provided for the welding field, and the requirements of different welding processes and welding flux types are met.

This invention belongs to the field of crystal growth technology and relates to a flux-based hexagonal R 1‑x In x A method for growing FeO3 (R=Lu,Yb,Tm,x=0-1) crystals. This method involves introducing In... 3+ The orthorhombic RFeO3 (R = Lu, Yb, Tm) structure was successfully induced into a hexagonal InFeO3 structure. Furthermore, this method employed a KF-X2CO3 (X = Li, Na, K) composite flux system to achieve stable growth of RFeO3 at ambient pressure and relatively low temperatures. 1‑x In x FeO3 (R = Lu, Yb, Tm) crystals. Compared with the prior art, this invention overcomes the stringent requirements of high temperature and high pressure growth for hexagonal RFeO3 crystals. The grown crystals not only have controllable composition and can achieve continuous changes from orthorhombic to hexagonal structures, but also have crystal sizes on the order of centimeters and high crystal quality.

The invention relates to a method for monitoring a flux application 2 in a soldering process 4, comprising the following steps: - Defining flux wetting areas 6 with respect to a figure 8 of an application surface 10; - Generating a thermographic image 12 of the application surface 10 selectively provided with liquid flux 14; - Defining adjustment points 16 on the application surface 10, which are identifiable in the figure 8 and in the thermographic image 12; - Superimposing the figure 8 and the thermographic image 12 using the adjustment points 16; - Comparing the position of temperature anomalies 18 on the application surface 10, which are identified by means of the thermographic image 12, with the position of the flux wetting areas 6 in the figure 8.

The application belongs to the technical field of crystal materials, and particularly relates to an alkali rare earth oxide NaRO2 crystal and a growth method and application thereof. The application breaks through the crystal growth problem by finding a suitable flux system (sodium hydroxide, sodium carbonate or a sodium carbonate-sodium hydroxide mixture), first grows a delafossite structure NaRO2 (R=rare earth element) single crystal, and simultaneously first synthesizes and grows an octahedral single crystal with a pyrochlore structure. The crystal growth condition involved in the application is simple, the growth efficiency is high, the growth cycle is short, and high-quality single crystals can be easily obtained; the size of the single crystals can be further regulated by regulating the growth cycle and the cooling rate, which is convenient and fast; the grown NaRO2 compound single crystals can be used for studying magnetic frustration, quantum fluctuation, quantum entanglement or super-low-temperature magnetic refrigeration, and have good application prospects.

The invention provides a fluxing agent for beta-gallium oxide crystal growth and a crystal growth method based on the fluxing agent, and belongs to the technical field of crystal growth. The fluxing agent for beta-gallium oxide crystal growth comprises at least two of an antimony-containing compound, a cesium-containing compound and a boron-containing compound. The fluxing agent system provided by the invention does not contain toxic and harmful components such as lead oxide, lead fluoride and the like which are commonly used in high-temperature fluxing agents. By utilizing the fluxing agent system, the growth temperature interval of the gallium oxide crystal is 750-1050 DEG C. Compared with the existing fluxing agent system, the growth temperature of the crystal is effectively reduced, the solvent viscosity is small, the volatilization of components is less, the high-temperature solution is clear and transparent, the growth process of the crystal is convenient to control in real time, and the obtained crystal is relatively good in quality and free of a wrapping phenomenon; and the high-quality beta-Ga2O3 crystal is easy to obtain.

The present invention discloses a high-quality gallium nitride crystal, a flux growth method thereof and applications. The growth method includes: performing primary growth using a first flux system to obtain an intermediate crystal, forming a plurality of gallium nitride nanowires on the growth surface of the intermediate crystal to form a nanowire template layer, and the first flux system contains metallic nickel; using a second flux system, and performing secondary growth with the intermediate crystal as a basis to form a merged growth layer that grows outward and merges from the nanowire template layer, and finally obtaining a high-quality gallium nitride crystal. The present invention uses a two-step flux method to achieve crystal growth. During the first growth, gallium nitride nanowires are formed by the catalytic action of metallic nickel. The nanowire template layer composed of the gallium nitride nanowires has the characteristics of being dense and uniform. The gallium nitride crystal obtained by performing secondary growth based on the nanowire template layer grows uniformly, more effectively reducing the dislocation density of the regrown gallium nitride and reducing stress at the same time.