6 results about "Flux system" patented technology

A flux system includes a memory and a processor in communication with the memory and a sensing device, the memory storing a plurality of capabilities and a plurality of semantic fluxes associated with the plurality of capabilities. The computing system is configured to infer a semantic based on received inputs and to infer an activity interest semantic based on an input, and to assign at least one augmentation servicing agent to service an activity interest based on semantic matching.

This invention relates to a flux and a method for growing β-Ga₂O₃ crystals. The invention uses LiBO₂-metal fluoride as a composite flux system for β-Ga₂O₃ crystal growth, with a molar ratio of LiBO₂ to metal fluoride of 1–0.8:0.04–0.2, and a crystal growth temperature range of 700–1000℃. Compared with existing technologies, the flux system proposed in this invention does not contain toxic or harmful components such as PbO and PbSO₄ commonly used in high-temperature fluxes. It can significantly reduce the saturation temperature of β-Ga₂O₃ crystals, improve the stability of the growth system, and the metal fluoride can effectively break the B-O bond chain. The solvent viscosity is low, avoiding the formation of inclusions and facilitating the acquisition of high-quality β-Ga₂O₃ crystals.

The invention relates to a method for improving soldering flux components based on a thermodynamic activity model of the soldering flux components. The method comprises the steps that a target welding flux system and the total mole number of all components before reaction are determined; determining a structural unit of the soldering flux by referring to the related phase diagram and literature; setting component activity and related parameters; a welding slag activity calculation model is established according to the mass balance relation and the chemical reaction balance principle; scientific calculation software is used for programming calculation, and the final components of the welding flux during welding seam forming are controlled by adjusting the initial components. The method is suitable for various welding flux systems, welding appearance forming can be effectively improved, the internal defect rate of welding seams is reduced, and wide universality and practicability are achieved. By optimizing the components of the welding flux, a scientific and efficient improvement method is provided for the welding field, and the requirements of different welding processes and welding flux types are met.

This invention belongs to the field of crystal growth technology and relates to a flux-based hexagonal R 1‑x In x A method for growing FeO3 (R=Lu,Yb,Tm,x=0-1) crystals. This method involves introducing In... 3+ The orthorhombic RFeO3 (R = Lu, Yb, Tm) structure was successfully induced into a hexagonal InFeO3 structure. Furthermore, this method employed a KF-X2CO3 (X = Li, Na, K) composite flux system to achieve stable growth of RFeO3 at ambient pressure and relatively low temperatures. 1‑x In x FeO3 (R = Lu, Yb, Tm) crystals. Compared with the prior art, this invention overcomes the stringent requirements of high temperature and high pressure growth for hexagonal RFeO3 crystals. The grown crystals not only have controllable composition and can achieve continuous changes from orthorhombic to hexagonal structures, but also have crystal sizes on the order of centimeters and high crystal quality.

The application belongs to the technical field of crystal materials, and particularly relates to an alkali rare earth oxide NaRO2 crystal and a growth method and application thereof. The application breaks through the crystal growth problem by finding a suitable flux system (sodium hydroxide, sodium carbonate or a sodium carbonate-sodium hydroxide mixture), first grows a delafossite structure NaRO2 (R=rare earth element) single crystal, and simultaneously first synthesizes and grows an octahedral single crystal with a pyrochlore structure. The crystal growth condition involved in the application is simple, the growth efficiency is high, the growth cycle is short, and high-quality single crystals can be easily obtained; the size of the single crystals can be further regulated by regulating the growth cycle and the cooling rate, which is convenient and fast; the grown NaRO2 compound single crystals can be used for studying magnetic frustration, quantum fluctuation, quantum entanglement or super-low-temperature magnetic refrigeration, and have good application prospects.

The invention provides a fluxing agent for beta-gallium oxide crystal growth and a crystal growth method based on the fluxing agent, and belongs to the technical field of crystal growth. The fluxing agent for beta-gallium oxide crystal growth comprises at least two of an antimony-containing compound, a cesium-containing compound and a boron-containing compound. The fluxing agent system provided by the invention does not contain toxic and harmful components such as lead oxide, lead fluoride and the like which are commonly used in high-temperature fluxing agents. By utilizing the fluxing agent system, the growth temperature interval of the gallium oxide crystal is 750-1050 DEG C. Compared with the existing fluxing agent system, the growth temperature of the crystal is effectively reduced, the solvent viscosity is small, the volatilization of components is less, the high-temperature solution is clear and transparent, the growth process of the crystal is convenient to control in real time, and the obtained crystal is relatively good in quality and free of a wrapping phenomenon; and the high-quality beta-Ga2O3 crystal is easy to obtain.