Chuck assembly and high density plasma device possessing the assembly

A high-density plasma and chuck technology, which is applied in the fields of plasma, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as film damage and rice grain defects

Inactive Publication Date: 2008-11-26
SAMSUNG ELECTRONICS CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] As a result, when the diffusion process is performed next to the process of forming the high-density plasma oxide film, the film at the previously damaged semiconductor substrate portion is further damaged, resulting in rice defects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chuck assembly and high density plasma device possessing the assembly
  • Chuck assembly and high density plasma device possessing the assembly
  • Chuck assembly and high density plasma device possessing the assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be described more fully herein with reference to the accompanying drawings in which embodiments of the invention are shown. However, this invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, the disclosed embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. In addition, each embodiment described and illustrated herein includes its complementary conductivity type embodiment as well. Like numbers refer to like elements throughout.

[0033] It will be understood that when an element or layer is described as being "on," "connected to" and / or "coupled to" another element or layer, it can be directly on , connected or coupled to another element or layer or intervenin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A chuck assembly for high density plasma equipment includes: a chuck having an upper surface and a plurality of pin holes formed in an outer peripheral portion, wherein the chuck upper surface is configured to receive a semiconductor substrate thereon; a substrate guide disposed on an outer surface of the chuck, wherein the substrate guide is configured to prevent a semiconductor substrate positioned on the upper surface of the chuck from being separated from the chuck; a fixing plate disposed at a lower portion of the chuck; a plurality of lift pins secured to the fixing plate and extending in an upward direction from the fixing plate so that each lift pin is inserted into a respective one of the pin holes, wherein each lift pin has an upper surface that extends to a position adjacent to the upper surface of the chuck; and a chuck lifter penetrating the fixing plate and engaged with a lower portion of the chuck, wherein the chuck lifter is configured to move the chuck upward and downward.

Description

technical field [0001] The present invention relates generally to semiconductor devices and, more particularly, to apparatus for fabricating the semiconductor devices. Background technique [0002] Generally, a semiconductor device manufacturing process includes a process of depositing a material film such as an insulating film, a semiconductor film, and a conductor film on a semiconductor substrate, and the material film is formed using a chemical vapor deposition apparatus. [0003] As semiconductor devices are becoming highly integrated, techniques such as trench isolation processes are becoming widely used. The main technique of the trench isolation process includes forming a narrow and deep trench region by etching a predetermined region of a semiconductor substrate and filling the trench region with an insulating film having good step coverage. [0004] In recent years, high-density plasma oxide films have been widely used as insulating films for filling recessed regi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683H01L21/00C23C16/458H01J37/32H05H1/00
CPCH01L21/68735H01L21/68742C23C16/458C23C16/50H01L21/67207
Inventor 李相根崔敏镐朴成旭金镇成朴钟硕金大玄
Owner SAMSUNG ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap