Solid-state image pickup device and fabrication method therefor

Abstract

Disclosed herein are a solid-state image pickup device and a making method therefor. The solid-state image pickup device includes, a light receiving pixel section, a black level reference pixel section, a multi-layer wiring line section containing the first to fourth metal wiring line layer, a first light blocking film, a second light blocking film, a third light blocking film, and a fourth lightblocking layer. Some first metal wiring lines in the first metal wiring line layer are spaced each other in a predetermined distance and arranged above the black level reference pixel section according to a plurality of rows to form the first light blocking film, some second metal wiring lines in the second metal wiring line layer are arranged among the first metal wiring lines above to form the second light blocking film, some third metal wiring lines in the third metal wiring line layer are spaced each other in a predetermined distance in the direction perpendicular to the second light blocking film and arranged above the black level reference pixel section according to a plurality of rows to form the third light blocking film, some fourth metal wiring lines in the fourth metal wiring line layer are arranged among the third metal wiring lines above to form the fourth light blocking film.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Applications JP 2008-231782 and JP 2008-007730 filed with the Japan Patent Office on September 10, 2008 and January 17, 2008, the entire contents of which are hereby incorporated incorporated herein by reference. technical field [0003] The present invention relates to a solid-state imaging device and a manufacturing method thereof. Background technique [0004] In a CMOS (Complementary Metal Oxide Semiconductor) type solid-state imaging device, which is one of the image sensors, an area where light is not allowed to enter is, for example, constituted as a black electrode for defining black to be used as a color reference. In the area of ​​the flat reference pixel portion or the peripheral circuit area, metal wiring or optical filters are usually used to shield light. For example, as a light-shielding film formed of metal wiring, a wiring havin...

AI Technical Summary

Problems solved by technology

[0016]In short, as the integration level of LSI increases, the film thickness of the light-shielding film itself will also decrease, and the light-shielding performance will deteriorate

In addition, since dishing or erosion in CMP for wiring processing reduces the film thickness of the light-shielding film, it degrades the light-shielding performance

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