Ultra-high-power LED die set light source structure

A technology of LED modules and ultra-high power, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of difficult chip size, low LED chip power, difficult LED lighting, etc., to meet psychological needs, structure Simple, highly marketable results

Inactive Publication Date: 2012-05-02
DONGGUAN CLED OPTOELECTRONIT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the constraints of the LED chip manufacturing process, it is difficult to increase the chip size, so that the power of the LED chip is not large (generally below 5W), so it is difficult for a single-chip packaged LED to meet the lighting requirements.

Method used

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  • Ultra-high-power LED die set light source structure
  • Ultra-high-power LED die set light source structure
  • Ultra-high-power LED die set light source structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In the ultra-high-power LED module light source of the present invention, the connection between the LED chip and the bracket can be done by artificial or automatic die-bonding, and the wire can be bonded by a semi-automatic wire bonding machine or a fully automatic wire bonding machine. The production of the phosphor layer and its silica gel layer can be realized by an automatic dispensing machine in the existing high-power operation mode.

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Abstract

The invention discloses an ultra-high-power LED module light source, including an LED stent, an LED chip, a gold thread, a phosphor powder layer, and a silica gel layer; the LED module light source is characterized in that the LED chip is tightly fixed on the substrate of the LED stent by silver glue or solder paste or the gold solder technology; the connection of a chip circuit thereof is realized in a form of the gold thread; the phosphor powder silica gel layer or the silica gel layer is distributed on the periphery and the top part of the chip; in order to achieve the conversion of color temperature of light, at least one layer of silica gel layer which has the thickness within the range of 0.1-100 mm and the preferred thickness within the range of 0.5-3 mm is included. In order to protect the gold thread and the phosphor powder layer, the silica gel layer can be additionally arranged on the outer layer of the phosphor powder, with the thickness within the range of 0.1-5 mm. The problem of less package power for a single LED as the self-power of the LED chip is difficult to become large is solved, the package power for the single LED can reach more than 5 watts, and the needs for solid-state lighting in a new period is met. The invention has simple structure, leads the LED lighting products to be closer to the traditional light source lighting products, meets the psychological needs of people, and has higher market benefit.

Description

technical field [0001] The invention relates to an LED light source, in particular to a high-power LED light source for lighting level. Background technique [0002] At present, the world's energy shortage has caused countries to attach great importance to energy-saving technologies. While vigorously developing renewable and clean energy such as solar energy and wind energy, countries are also increasing their efforts in rational and effective use of energy. Reflected in lighting is the continuous innovation and wide application of various new light sources. Among them, light-emitting diodes have attracted more and more attention due to their low energy consumption, high luminous efficiency, long life and high reliability, and have been gradually applied to the lighting field. Due to the constraints of the LED chip manufacturing process, it is difficult to increase the chip size, so that the power of the LED chip is not large (generally below 5W), so it is difficult for the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L25/075
CPCH01L2224/45144H01L2224/48091H01L2224/48137H01L2224/73265H01L2924/00014H01L2924/00
Inventor 陈德华欧发文束红运
Owner DONGGUAN CLED OPTOELECTRONIT TECH
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