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Semiconductor device and method for manufacturing the same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as limitations, increase of net grains, and reduction of design rules

Inactive Publication Date: 2009-09-16
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there is a limit in widening the area of ​​each semiconductor device due to the decrease in design rules for increasing the net die

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

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Embodiment Construction

[0028] Figure 1a to Figure 1b is a cross-sectional view illustrating a semiconductor device according to an embodiment of the present invention. Figure 1a showing along Figure 1b The layout diagram of the semiconductor device formed on the SOI wafer taken by Y-Y'. Figure 1b showing along Figure 1a The cross-sectional view taken by XX'.

[0029] refer to Figure 1b A capacitor region I and a transistor region II are defined on the SOI wafer, and the SOI wafer includes a first silicon layer 100 , a buried oxide layer 110 and a second silicon layer (not shown).

[0030] Each active region 120a is defined in the capacitor region I and the transistor region II via a device isolation film 135 where the second silicon layer is removed. The gate electrode 140 is formed on and in the middle of the active region 120a of the transistor region II.

[0031] In the semiconductor device, n+ impurity ions are implanted into the active region 120a of the capacitor region I, thereby o...

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Abstract

The invention discloses a semiconductor device and method for manufacturing the same. The semiconductor device may include a capacitor and a transistor on a silicon-on-insulator (SOI) substrate and a method for manufacturing the semiconductor device may include forming such a structure. A semiconductor device, formed on a silicon-on-insulator structure including first and second silicon layers and a insulating layer buried between the first and the second silicon layers, may include a capacitor including one electrode formed in a doped region of the first silicon layer and the other electrode formed in a well region of the second silicon layer.

Description

technical field [0001] The present invention generally relates to a semiconductor device and a method of manufacturing the same, and more particularly, to a semiconductor device requiring a capacitor using a silicon-on-insulator (SOI) substrate. Background technique [0002] Generally, semiconductor devices are integrated on silicon wafers. In silicon wafers used for semiconductor devices, not the entire silicon layer is used but only a limited area a few micrometers from the top surface of the silicon layer is used when the semiconductor device operates. However, the remaining portion other than a limited area of ​​a predetermined thickness from the top surface of the silicon wafer consumes power unnecessarily during operation of the semiconductor device. Therefore, the overall power consumption of the semiconductor device increases, and specifically, the operating speed of the semiconductor device decreases. [0003] In order to overcome the above-mentioned disadvantages...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/92H01L27/12H01L21/02H01L21/84H10B12/00
CPCH01L21/84H01L27/1203H01L29/94H01L28/40H01L21/20H10B99/00H10B12/00
Inventor 黄祥珉
Owner SK HYNIX INC