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Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced

A technology of plasma and processing device, applied in the field of plasma processing device

Inactive Publication Date: 2011-04-13
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] On the contrary, when the pressure at the time of cleaning is high, since free radicals (active species) with a small cleaning effect become the main body, it has the following advantages. , even if the surface of a part of the component where the unnecessary film is removed prematurely is knocked by free radicals, the component itself is basically not damaged, but there is a problem that the cleaning speed itself is slow

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  • Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced
  • Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced
  • Method of cleaning plasma-treating apparatus, plasma-treating apparatus where the cleaning method is practiced

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Embodiment Construction

[0031] Next, an aspect of a preferred embodiment of the plasma processing apparatus and its cleaning method according to the present invention will be described with reference to the drawings.

[0032] figure 1 It is a configuration diagram showing an example of the plasma processing apparatus of the present invention. Here, a case where a radial line slot antenna (RLSA: Radial Line Slot Antenna) type planar antenna member is used as an example of a plasma processing apparatus will be described.

[0033] As shown in the figure, the plasma processing apparatus 30 has, for example, a processing container 32 whose side wall or bottom is made of a conductor such as an aluminum alloy and integrally formed into a cylindrical shape, and a processing space S is sealed inside. plasma. The processing container 32 itself is grounded.

[0034] In the processing container 32, a mounting table 34 is housed, on which a semiconductor wafer W as an object to be processed is placed, for exa...

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Abstract

A method of cleaning a plasma-treating apparatus including a treating vessel (32) which is capable of evacuation and in which a work (W) is treated with a plasma. The method comprises: a first cleaning step in which a plasma is generated while supplying a cleaning gas to the treating vessel and the pressure inside the treating vessel is kept at a first pressure to thereby clean the vessel; and a second cleaning step in which a plasma is generated while supplying a cleaning gas to the treating vessel and the pressure inside the treating vessel is kept at a second pressure higher than the firstpressure to clean the vessel. The treating vessel is efficiently and rapidly cleaned without damaging the inner wall surface of the treating vessel or the member(s) present in the vessel.

Description

technical field [0001] The present invention relates to a plasma processing apparatus and a cleaning method thereof used for processing semiconductor wafers and the like by applying plasma generated by microwaves or high frequencies. Background technique [0002] In recent years, with the high density and high precision of semiconductor products, in the manufacturing process of semiconductor products, in order to perform film formation, etching, ashing and other treatments, plasma processing equipment is often used, especially because even in Plasma can be stably generated in a high vacuum state with a relatively low pressure of about 0.1mTorr (13.3mPa) to tens of mTorr (several Pa), so there are plasmas that use microwaves or high frequencies to generate high-density plasma Tendency to handle devices. [0003] Such a plasma processing device is disclosed in Japanese Patent Application Publication No. 3-191073, Japanese Patent Application Publication No. 5-343334, Japanese...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H01L21/3065C23C16/44
CPCH01J37/32862C23C16/52H01J37/32192C23C16/4405C23C16/511H01L21/306H01L21/3065
Inventor 吹上纪明河本慎二高场裕之石桥清隆
Owner TOKYO ELECTRON LTD