Method of manufacturing a solid electrolytic capacitor with a sufficiently low impedance in a high frequency range
A technology of solid electrolysis and manufacturing method, applied in the direction of solid electrolytic capacitors, electrolytic capacitor manufacturing, electrolytic capacitors, etc., can solve the problems of impedance design and low conductivity in the high frequency region of difficult capacitors
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Embodiment 1
[0026] Since the solid electrolytic capacitor manufactured by the manufacturing method of Example 1 has the same structure as the solid electrolytic capacitor described in the embodiment, refer again to figure 1 and figure 2 Be explained.
[0027] figure 1 and figure 2 The solid electrolytic capacitor shown includes a valve metal 1 as an anode-side electrode, a dielectric oxide film layer 2 obtained by anodizing the surface of the valve metal 1, and a conductive polymer layer 3 as a solid electrolyte. The cathode layer 4, the external electrodes 61, 62 and the outer layer resin 8 are formed of conductive paste.
[0028] When manufacturing this solid electrolytic capacitor, first, a valve metal 1 that is a sintered body of tantalum fine powder with a length of 3.5 mm, a width of 3.0 mm, and a thickness of 1.5 mm is manufactured. It is anodized by applying a voltage of 30V in phosphoric acid aqueous solution to obtain particles whose entire surface of the tantalum fine pow...
Embodiment 2
[0034] In the production method of Example 2, the pH of the aqueous solution of the oxidizing agent containing the dopant was adjusted to 6. Other than that, it is the same as in Example 1.
[0035] First, the same valve metal 1 as that in Example 1 was prepared. A dielectric oxide layer 2 was formed thereon in the same manner as in Example 1 to obtain particles.
[0036] In addition, an aqueous solution containing 20% by mass of ammonium peroxodisulfate and 20% by mass of 1,3,6-naphthalenetrisulfonic acid as an oxidizing agent and adjusted to pH 6 using imidazole was prepared. The particles covered with the dielectric oxide film layer 2 were immersed in this aqueous solution for 10 minutes to fill with an oxidizing agent. Next, after drying at room temperature for 30 minutes, it was immersed in pyrrole for 10 minutes and kept at room temperature for 30 minutes to perform polymerization of pyrrole. A series of polymerization operations for filling these oxidizing agents a...
Embodiment 3
[0039] In the production method of Example 3, the pH of the aqueous solution of the oxidizing agent containing the dopant was adjusted to 8. Other than that, it is the same as in Example 1.
[0040] First, the same valve metal 1 as that in Example 1 was prepared. A dielectric oxide layer 2 was formed thereon in the same manner as in Example 1 to obtain particles.
[0041] In addition, an aqueous solution containing 20% by mass of ammonium peroxodisulfate and 20% by mass of 1,3,6-naphthalenetrisulfonic acid as an oxidizing agent and adjusted to pH 8 using imidazole was prepared. The particles covered with the dielectric oxide film layer 2 were immersed in this aqueous solution for 10 minutes to fill with an oxidizing agent. Next, after drying at room temperature for 30 minutes, it was immersed in pyrrole for 10 minutes and kept at room temperature for 30 minutes to perform polymerization of pyrrole. A series of polymerization operations for filling these oxidizing agents a...
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