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Semiconductor structures and manufacturing method thereof

一种半导体、锗半导体的技术，应用在绝缘体上半导体异质结构领域，能够解决含锗半导体材料和化合物半导体材料不是等问题

Active Publication Date: 2011-01-12
GLOBALFOUNDRIES INC
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  • Claims
  • Application Information

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Problems solved by technology

[0005] While the dominant germanium-containing semiconductor materials and compound semiconductor materials are thus ideal in the field of semiconductor-on-insulator heterostructures within the field of semiconductor manufacturing, the dominant germanium-containing semiconductor materials and compound semiconductor materials within the category of semiconductor-on-insulator heterostructures not completely without problems

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  • Semiconductor structures and manufacturing method thereof
  • Semiconductor structures and manufacturing method thereof
  • Semiconductor structures and manufacturing method thereof

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Embodiment Construction

[0020] The present invention includes a semiconductor-on-insulator heterostructure and a method for manufacturing the semiconductor-on-insulator heterostructure, and the present invention can be understood from the description set forth below. The following description is to be understood in light of the figures described above. Since the figures are intended for illustrative purposes, the figures are not necessarily drawn to scale.

[0021] Figure 1 to Figure 8 A series of schematic perspective views showing the results of progressive stages in fabricating a semiconductor-on-insulator heterostructure according to specific embodiments of the invention. This particular embodiment of the invention comprises a first general embodiment of the invention from which more specific embodiments of the invention are derived in light of the further disclosure below. figure 1 A schematic perspective view of a semiconductor-on-insulator heterostructure according to this first general emb...

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Abstract

A semiconductor-on-insulator hetero-structure and a method for fabricating the semiconductor-on-insulator hetero-structure include a crystalline substrate and a dielectric layer located thereupon having an aperture that exposes the crystalline substrate. The semiconductor-on-insulator hetero-structure and the method for fabricating the semiconductor-on-insulator hetero-structure also include a semiconductor layer of composition different than the crystalline substrate located within the aperture and upon the dielectric layer. A portion of the semiconductor layer located aligned over the aperture includes a defect. A portion of the semiconductor layer located aligned over the dielectric layer does not include a defect. Upon removing the portion of the semiconductor layer located aligned over the aperture a reduced defect semiconductor-on-insulator hetero-structure is formed.

Description

technical field [0001] The present invention generally relates to semiconductor-on-insulator heterostructures. More specifically, the present invention relates to defect-reduced semiconductor layers within the semantics of semiconductor-on-insulator heterostructures. Background technique [0002] A semiconductor structure typically includes a semiconductor substrate in and on which semiconductor devices are formed, such as, but not limited to, resistors, transistors, capacitors, and diodes. The semiconductor devices are connected and interconnected using patterned conductive layers separated by dielectric layers. [0003] With the advancement of semiconductor technology, semiconductor substrate materials have also evolved from the usual traditional mainly silicon-containing semiconductor materials (i.e., greater than 50 atomic percent silicon) to include alternative semiconductor materials, such as mainly germanium-containing semiconductor materials (i.e., greater than 50 a...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/30H01L21/22H01L21/3215
CPCH01L21/02639H01L21/76283H01L21/02647H01L21/02532H01L21/02381
Inventor 斯蒂芬·W·贝德尔金志焕亚历山大·雷兹尼塞克德温德拉·K·萨达纳
Owner GLOBALFOUNDRIES INC