Cleaning composition for removing resist

Abstract

A cleaning composition for removing resist includes potassium hydroxide, dimethylsulfoxide, pentaerythritol, and alcohol amine. The cleaning composition may clean resist and other residue from a metal, metal alloy and dielectric substrate, and has low etch rate for a metal, such as Cu and the like.

Description

technical field [0001] The invention relates to a cleaning agent in a semiconductor manufacturing process, in particular to a photoresist cleaning agent. technical background [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. In the wafer microsphere implantation process (bumping technology), a photoresist material (photoresist) is also required to form a mask, which also needs to be removed after the microspheres are successfully implanted, but due to the thicker photoresist , is often difficult to remove completely. The more common methods to improve the removal effect are to extend the soaking time, increase the soaking temperature and use more aggressive solutions, but this often causes corrosion of the wafer substrate and microspheres, resulting in a significant decrease in wafer...

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is to provide a cleaning agent with strong cleaning ability, which can effectively remove thick films, in order to overcome the problem of insufficient cleaning ability of photoresist cleaning agents in the prior art, or strong corrosion to wafer substrates. Photoresists, photoresist cleaners that are less corrosive to wafer substrates

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