Low-etching photoresist cleaning agent and cleaning method thereof

Abstract

Provided are a low-etching photoresist cleaning agent and a cleaning method thereof. This low etch photoresist cleaning agent comprises (a) quaternary ammonium hydroxide, (b) dimethyl sulfoxide, (c) alkyl glycol aryl ether and its derivatives of the general formula, wherein R1 C6-18 aryl; R2 is H, C1-18 alkyl or C6-18 aryl, m=2-6, n=1-6, (d) ethanolamine, (e) water and (f) corrosion inhibitor agent. The cleaning agent can be used to remove photoresist and other residues on metal, metal alloy or dielectric substrates, and can effectively inhibit the corrosion of metals such as silicon dioxide, Cu, Pb and Sn, and low-k materials.

Description

technical field [0001] The invention relates to a low-etching photoresist cleaning agent and a cleaning method thereof. technical background [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of metals such as silicon dioxide, Cu (copper), and low-k materials, and pattern transfer is performed by wet or dry etching after exposure. Low temperature and fast cleaning process is an important direction for the development of semiconductor wafer manufacturing process. In addition, during the chemical cleaning process of the photoresist on the semiconductor wafer, the cleaning agent with a higher pH will cause corrosion of the wafer substrate. Especially in the process of using chemical cleaning agents to remove metal etching residues, metal corrosion is a common and very serious problem, which often leads to a significant decrease in wafer yield. [0003] The patent document WO04059700 utilizes an alkaline cleaning agent compos...

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Problems solved by technology

Higher cleaning temperatures can cause corrosion of semiconductor wafer substrates

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