N-InP-based monolithic integrated optical logic gate and manufacturing method thereof

Abstract

The invention discloses an n-InP-based monolithic integrated optical logic gate. The gate comprises a substrate, an n type diluting waveguide layer, a lower limit layer, a multiple quantum well layer, an upper limit layer, a cover layer, a contact layer, an N type wide bandgap layer, a P type narrow bandgap absorption layer, a P type heavily doped InP electronic barrier layer, a P type heavily doped InGaAs contact layer, an n type metal electrode layer, a silicon nitride or silicon oxide isolating coating, a polymer cladding, a film resistor, a P type microstrip linear metal electrode and a Ptype electrode board, wherein the n type diluting waveguide layer is manufactured on the substrate; the lower limit layer, the multiple quantum well layer, the upper limit layer, the cover layer and the contact layer are sequentially manufactured on the n type diluting waveguide layer to form an electric absorption modulator structure; the N type wide bandgap layer, the P type narrow bandgap absorption layer, the P type heavily doped InP electronic barrier layer and the P type heavily doped InGaAs contact layer are sequentially manufactured on the n type diluting waveguide layer to form single-row current carrier detector structure; the n type metal electrode layer is manufactured on the n type diluting waveguide layer; the silicon nitride or silicon oxide isolating coating is manufactured on the n type metal electrode layer and covers the side surfaces and surroundings of the electric absorption modulator structure and the single-row current carrier detector structure; the polymer cladding is manufactured on the silicon nitride or silicon oxide isolating coating; the film resistor is manufactured on the polymer cladding; and the P type microstrip linear metal electrode and the P type electrode board are manufactured on the polymer cladding and are connected through the film resistor.

Description

technical field [0001] The invention belongs to the field of optoelectronic integration (OEIC), in particular to a monolithic integrated waveguide type unidirectional carrier detector (WG-UTC-PD) and an inner step quantum well electroabsorption modulator (IQW) on an n-InP substrate. -EAM) and thin film resistors and MIM capacitors to realize the technical scheme and manufacturing method of optical logic AND gates. Background technique [0002] The current optical communication network is a photoelectric hybrid network, and the transmission capacity of information in optical fibers is extremely large, which has reached more than 20Tbit / s at present; however, the processing speed of information on optical network nodes can only reach the order of Gbit / s, and the information on network nodes Processing speed is currently the bottleneck of optical network performance improvement. Among the current methods of optical information processing, the traditional photoelectric-optical ...

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