Unlock instant, AI-driven research and patent intelligence for your innovation.

Electrostatic discharge protection system

An electrostatic discharge protection and electrostatic discharge technology, applied in the field of electrostatic discharge protection systems, can solve problems such as the decline of ESD protection capability, and achieve the effects of improving ESD protection capability, increasing system area, and improving protection capability

Active Publication Date: 2013-10-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the ESD protection capability is significantly reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic discharge protection system
  • Electrostatic discharge protection system
  • Electrostatic discharge protection system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and claims. It should be noted that the drawings are all in a very simplified form and use imprecise ratios, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0040] The essence of the present invention is to provide a new electrostatic discharge protection system, fixedly set the same number of wide electrostatic discharge buses in each device on the same substrate, and connect the corresponding electrostatic discharge buses in each device connect. All power supply units and input and output units are respectively connected to the e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electrostatic discharge protection system. Electrostatic discharge buses that are enough wide are respectively arranged in different electrostatic discharge devices, and the electrostatic discharge bus in one device is connected with the electrostatic discharge bus in another device. ESD (electronic static discharge) currents among the devices are all concentrated on the electrostatic discharge buses which are connected with each other to form a system level discharge pathway. Therefore, when any unit of each electrostatic discharge protection device receives the electrostatic discharge current, the electrostatic discharge currents can be discharged from any one unit of other devices only by the system level discharge pathway. In addition, parasitic resistance on the electrostatic discharge buses is smaller, which keeps from over-high voltage of a certain device, and therefore, the ESD protection capability of the whole system is obviously improved.

Description

technical field [0001] The invention relates to an electrostatic discharge protection system, in particular to an electrostatic discharge system between devices based on the same substrate. Background technique [0002] As the integrated circuit manufacturing process level enters the deep sub-micron era of line width, the MOS elements in the integrated circuit adopt the lightly doped LDD (Lightly Doped Drain) structure, and the silicide process has been widely used on the diffusion layer of the MOS element. At the same time, in order to reduce the diffusion series resistance of the gate polycrystal, a polycrystal compound manufacturing process is adopted. With the shrinking of integrated circuit components, the thickness of the gate oxide layer of MOS components is getting thinner and thinner. The improvement of these manufacturing processes can greatly increase the operation speed inside the integrated circuit and increase the integration level of the circuit. However, the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H02H9/00H01L23/60
Inventor 单毅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP