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Circuit and method for radio frequency amplifier

A radio frequency amplifier, circuit technology, applied in high frequency amplifiers, circuits, improving amplifiers to reduce temperature/power supply voltage changes, etc., to achieve the effect of avoiding thermal noise performance

Inactive Publication Date: 2011-05-04
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Traditional RF amplifier ICs have limited bandwidth and thermal noise performance due to high input resistance and capacitance

Method used

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  • Circuit and method for radio frequency amplifier
  • Circuit and method for radio frequency amplifier
  • Circuit and method for radio frequency amplifier

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Embodiment Construction

[0044] The making and using of the presently preferred embodiments are described in detail below. It should be appreciated, however, that the present invention provides many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments described merely indicate specific ways to make and use the invention, and do not limit the scope of the invention.

[0045] A radio frequency (RF) amplifier circuit is provided. The same reference numerals are used to designate the same elements throughout the various views and illustrative embodiments of the invention. For simplicity of illustration, in the drawings, some circuit symbols are depicted as typical structures of RF amplifiers according to one or more embodiments. Any person skilled in the art should appreciate that these circuit symbols described are only schematic and are not used to show the actual location of the electrical components or elements represented by these circu...

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Abstract

A radio frequency amplifier circuit includes a substrate that is capable of receiving a substrate bias voltage. The source of a transistor is capable of receiving a source bias voltage. The drain of the transistor is capable of receiving a drain bias voltage. The gate of the transistor is located between the source and the drain. A radio frequency input signal is coupled to the gate. A substrate bias circuit provides the substrate bias voltage. The substrate bias voltage and the source bias voltage forward bias the first diode formed by the source and the substrate. The substrate bias voltage and the drain bias voltage reverse bias the second diode formed by the drain and the substrate.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to US Provisional Patent Application Serial No. 61 / 253,322, filed October 20, 2009, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates generally to integrated circuits, and more particularly to radio frequency (RF) amplifiers. Background technique [0004] Traditional RF amplifier ICs have limited bandwidth and thermal noise performance due to high input resistance and capacitance. Thus, new circuits and methods for RF amplifier integrated circuits are needed. Contents of the invention [0005] Aiming at the problems of the prior art, the present invention discloses a method for biasing a radio frequency amplifier using a transistor, including: [0006] applying a substrate bias voltage to the substrate of the transistor; [0007] applying a source bias voltage to the source of the transistor to forward bias a f...

Claims

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Application Information

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IPC IPC(8): H03F3/189H03F1/30
CPCH01L29/78H03F3/19
Inventor 周淳朴薛福隆刘莎莉
Owner TAIWAN SEMICON MFG CO LTD