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Light emitting device

A technology of light-emitting devices and light-emitting elements, which is applied in semiconductor devices, electric solid-state devices, electrical components, etc., and can solve problems such as reduced reliability, poor heat dissipation, and reduced luminous efficacy

Inactive Publication Date: 2013-10-09
ALPAD CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such a structure cannot sufficiently improve the efficiency
In addition, since the phosphor layer and the die-bonding adhesive are disposed between the LED chip and the lead frame, heat dissipation is poor; luminous efficacy is lowered due to heat generation; and reliability is undesirably lowered.
[0006] Although there is an increasing demand for more efficient light-emitting devices, the efficiency cannot be sufficiently improved by conventional techniques

Method used

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Examples

Experimental program
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no. 1 example

[0026] figure 1 is a schematic cross-sectional view illustrating the structure of the light emitting device according to the first embodiment of the present invention.

[0027] figure 2 is a schematic cross-sectional view illustrating the structure of a semiconductor light emitting element used in the light emitting device according to the first embodiment of the present invention.

[0028] Such as figure 1 As shown, the light emitting device 210 according to this embodiment includes a semiconductor light emitting element 10 , a mounting member 20 , a first wavelength converting layer 30 , and a first transparent layer 40 .

[0029] The first wavelength conversion layer 30 is provided between the semiconductor light emitting element 10 and the mounting member 20 and is in contact with the mounting member 20 . The first wavelength conversion layer 30 absorbs first light emitted from the semiconductor light emitting element 10 and emits second light having a wavelength great...

no. 1 example

[0066] The characteristics of the light emitting device according to the first example of this embodiment will be described below in comparison with a comparative example.

[0067] The light emitting device 210a of the first example has the same figure 1 The structure of the illustrated light emitting device 210 is similar in structure. The light emitting device 210a is constructed as follows.

[0068] A mounting base made of AlN was used as the mounting member 20 . In other words, the mounting member 20 is constructed by molding an AlN material.

[0069] On the other hand, as the semiconductor light emitting element 10, a blue LED chip having a light emitting layer 103 made of an InGaN compound semiconductor is used. The peak of the emission wavelength (the wavelength of the first light L1 ) of the semiconductor light emitting element 10 is 450 nm (nanometer).

[0070] The first transparent layer 40 is formed on the lower surface (second main surface 10 b ) of the semicon...

no. 2 example

[0091] Figure 6 is a schematic cross-sectional view illustrating the structure of a light emitting device according to a second embodiment of the present invention.

[0092] Such as Figure 6 As shown, in addition to the above-mentioned semiconductor light emitting element 10, mounting member 20, first wavelength conversion layer 30 and first transparent layer 40, the light emitting device 220 according to the second embodiment further includes a second wavelength conversion layer 80 and a second transparent layer Layer 60.

[0093] The second wavelength conversion layer 80 is provided on the opposite side of the semiconductor light emitting element 10 from the first transparent layer 40 . The second wavelength conversion layer 80 absorbs the first light L1 and emits third light having a wavelength characteristic different from that of the first light L1. The third light may have wavelength characteristics different from the second light L2; the third light may have substa...

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Abstract

According to one embodiment, a light emitting device includes a semiconductor light emitting element, a mounting member, a first wavelength conversion layer, and a first transparent layer. The semiconductor light emitting element emits a first light. The semiconductor light emitting element is placed on the mounting member. The first wavelength conversion layer is provided between the semiconductor light emitting element and the mounting member in contact with the mounting member. The first wavelength conversion layer absorbs the first light and emits a second light having a wavelength longer than a wavelength of the first light. The first transparent layer is provided between the semiconductor light emitting element and the first wavelength conversion layer in contact with the semiconductor light emitting element and the first wavelength conversion layer. The first transparent layer is transparent to the first light and the second light.

Description

[0001] Cross References to Related Applications [0002] This application is based upon and claims priority from prior Japanese Patent Application No. 2009-290553 filed on December 22, 2009, the entire contents of which are incorporated herein by reference. technical field [0003] Embodiments described herein relate generally to light emitting devices. Background technique [0004] White LED light emitting devices that emit white light by combining phosphors with semiconductor light emitting elements such as blue LEDs have been developed as small light emitting devices with low power consumption. [0005] JP-A 2001-210874 (Kokai) discloses a structure in which an LED chip including a substrate and a phosphor layer previously provided on the underside of the substrate is mounted on a lead frame, and the phosphor is applied to the LED on the surface of the chip. However, such a structure cannot sufficiently improve efficiency. In addition, since the phosphor layer and the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/50H01L33/64
CPCH01L33/507H01L33/508H01L33/504H01L24/29H01L2224/14H01L2224/48091H01L2224/49107H01L2224/73257H01L2224/73265H01L2224/92247H01L2924/12041H01L2924/00014H01L2924/00
Inventor 彦坂年辉佐藤高洋三石巌布上真也
Owner ALPAD CORP