Unlock instant, AI-driven research and patent intelligence for your innovation.

Light emitting device

A technology of light-emitting devices and light-emitting elements, which is applied in the direction of semiconductor devices, electric solid-state devices, and electrical components, and can solve problems such as reduced reliability, poor heat dissipation, and inability to fully improve efficiency

Inactive Publication Date: 2013-09-25
ALPAD CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, such a structure cannot sufficiently improve the efficiency
In addition, since the phosphor layer and the die-bonding adhesive are provided between the LED chip and the lead frame, heat dissipation is poor; luminous efficacy is lowered due to heat generation; and reliability is undesirably lowered
[0006] Although there is an increasing demand for more efficient light-emitting devices, the efficiency cannot be sufficiently improved by conventional techniques

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light emitting device
  • Light emitting device
  • Light emitting device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0023] figure 1 is a schematic cross-sectional view illustrating the structure of the light emitting device according to the first embodiment of the present invention.

[0024] figure 2 is a schematic cross-sectional view illustrating the structure of a semiconductor light emitting element used in the light emitting device according to the first embodiment of the present invention.

[0025] Such as figure 1 As shown, the light emitting device 210 according to this embodiment includes a semiconductor light emitting element 10 , a mounting member 20 , a first wavelength conversion layer 30 , a second wavelength conversion layer 80 , and a first transparent layer 60 .

[0026] The semiconductor light emitting element 10 is provided on the mounting member 20 . The first wavelength conversion layer 30 is provided between the semiconductor light emitting element 10 and the mounting member 20 and is in contact with the mounting member 20 . The first wavelength conversion layer 3...

no. 1 example

[0107] The characteristics of the light emitting device according to the first example of this embodiment will be described below in comparison with a comparative example. The light emitting device 210a of the first example is an example in which the first light L1 emitted from the semiconductor light emitting element 10 is blue light, and the light emitted from the first wavelength conversion layer 30 and the second wavelength conversion layer 80 (the second light L2 and The third light L3) is all yellow light.

[0108] The light emitting device 210a of the first example has the same figure 1 The structure of the illustrated light emitting device 210 is similar in structure. The light emitting device 210a is constructed as follows.

[0109] A mounting base made of AlN was used as the mounting member 20 . In other words, the mounting member 20 is constructed by molding an AlN material.

[0110] On the other hand, as the semiconductor light emitting element 10, a blue LED c...

no. 2 example

[0123] Figure 8 is a schematic cross-sectional view illustrating the structure of a light emitting device according to a second embodiment of the present invention.

[0124] Such as Figure 8 As shown, the light emitting device 220 according to the second embodiment further includes a second transparent layer 40 . The second transparent layer 40 is disposed between the semiconductor light emitting element 10 and the first wavelength conversion layer 30 , and is in contact with the semiconductor light emitting element 10 and the first wavelength conversion layer 30 . The second transparent layer 40 is transparent to the first light L1 and the second light L2.

[0125] The second transparent layer 40 may comprise any material that is transparent to the first and second lights. In other words, the second transparent layer 40 is substantially transparent to wavelengths in the vicinity of the emission wavelength of the semiconductor light emitting element 10 and to wavelengths ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

According to one embodiment, a light emitting device (210, 210a, 214, 215, 216, 218, 218a, 220, 220a, 220b) includes a semiconductor light emitting element (10) to emit a first light (L1), a mounting member (20), first and second wavelength conversion layers (30, 80) and a transparent layer (60). The first wavelength conversion layer (30) is provided between the element (10) and the mounting member (20) in contact with the mounting member (20). The first wavelength conversion layer (30) absorbs the first light (L1) and emits a second light (L2) having a wavelength longer than a wavelength of the first light (L1). The semiconductor light emitting element (10) is disposed between the second wavelength conversion layer (80) and the first wavelength conversion layer (30). The second wavelength conversion layer (80) absorbs the first light (L1) and emits a third light (L3) having a wavelength longer than the wavelength of the first light (L1). The transparent layer (60) is provided between the element (10) and the second wavelength conversion layer (80). The transparent layer (60) is transparent to the first, second, and third lights (L1, L2, L3).

Description

[0001] Cross References to Related Applications [0002] This application is based upon and claims priority from prior Japanese Patent Application No. 2009-290554 filed on December 22, 2009, the entire contents of which are incorporated herein by reference. technical field [0003] Embodiments described herein relate generally to light emitting devices. Background technique [0004] White LED light emitting devices that emit white light by combining phosphors with semiconductor light emitting elements such as blue LEDs have been developed as small light emitting devices with low power consumption. [0005] JP-A 2001-210874 (Kokai) discloses a structure in which an LED chip including a substrate and a phosphor layer preliminarily provided on the underside of the substrate is mounted on a lead frame, and the phosphor is applied to on the surface of the LED chip. However, such a structure cannot sufficiently improve efficiency. In addition, since the phosphor layer and the d...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/48H01L33/50H01L33/64
CPCH01L33/44H01L33/504H01L33/50H01L33/58H01L2924/181H01L24/29H01L24/32H01L2224/16225H01L2224/32225H01L2224/48091H01L2224/48227H01L2224/49107H01L2224/73265H01L2924/00012H01L2924/00014H01L2924/00
Inventor 彦坂年辉佐藤高洋三石巌布上真也
Owner ALPAD CORP