Photomask layer and method of forming the same
A photomask and film layer technology, applied in optics, originals for opto-mechanical processing, instruments, etc., can solve problems such as the inability to meet the needs of process flattening, and achieve the goal of meeting flattening requirements and reducing production costs. Effect
Active Publication Date: 2011-11-30
WUXI DISI MICROELECTRONICS CO LTD
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Problems solved by technology
[0007] 1. Organic anti-reflection layer: Organic matter hangs on the surface of the substrate, which is greatly affected by the shape of the substrate and cannot meet the requirements of PR for process planarization. Therefore, this method gradually fades out of the IC process
[0008] 2. DARC film: Changes in SiON layer thickness, refractive index and extinction coefficient will all affect exposure conditions, and the current CVD process control cannot effectively monitor the impact of changes in SiON film properties on photo CD, so this method There are also huge flaws
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[0033] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar extensions without violating the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.
[0034] Secondly, the present invention is described in detail using schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the...
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Abstract
The invention provides a photomask layer and a formation method thereof, the method comprises: a semiconductor basement is provided by comprising a substrate and a film required to be etched on the substrate; an all-reflecting film is formed on the film required to be etched, a photoetching glue layer is formed on the all-reflecting film, the surface of the all-reflecting film which faces a photoetching glue layer is a transmission plane, the surface of the all-reflecting film which faces the photoetching glue layer is a reflection plane. The invention is capable of raising the exposal effectof the photomask layer.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask layer and a forming method thereof. Background technique [0002] In semiconductor manufacturing, it is usually necessary to form a photomask layer on the film layer to be etched before etching, and then use a photolithography process to form an opening in the photomask layer, and the opening will be etched to remove the film layer The position is exposed, and the rest of the position is protected, so that the etching pattern is obtained after etching, and then the photomask layer can be removed. [0003] However, the photomask layer formed by the traditional method usually only includes a photoresist layer (PR). pattern, part of the incident light is reflected back to the photoresist layer at the interface between the photoresist layer and the film to be etched under the photoresist layer, and the other part of the incident light enters the film ...
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IPC IPC(8): G03F1/14
Inventor 卜维亮李健张炳一
Owner WUXI DISI MICROELECTRONICS CO LTD