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solid state imaging device

A solid-state imaging device and pixel technology, applied in image communication, TV, color TV components, etc., can solve the problem of insufficient suppression of interference

Inactive Publication Date: 2011-12-14
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, when CDS is performed, since the reference level is sampled from the signal before the amplification factor is switched, and the signal level is sampled from the signal after the amplification factor is switched, CDS is not enough to suppress interference.

Method used

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Experimental program
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Effect test

no. 1 approach

[0047] figure 1 It is a block diagram showing a schematic configuration of the solid-state imaging device according to the first embodiment of the present invention.

[0048] exist figure 1 In this solid-state imaging device, a pixel array section 1 is arranged in a matrix in a row direction and a column direction to store pixels PC that have undergone photoelectric conversion, and a row scanning circuit 2 scans in a vertical direction to become a read The pixel PC of the object; the column amplification circuit 3-1, amplifies the signal read from the pixel PC in each column with the amplification factor A1; the column amplification circuit 3-2, amplifies the signal read from the pixel PC in each column with the amplification factor A2 Signal; sample and hold signal conversion circuit 4-1, the signal component of each pixel PC amplified with amplification factor A1 is detected by CDS; sample and hold signal conversion circuit 4-2, the signal of each pixel PC amplified with am...

no. 2 approach

[0065] figure 2 It is a circuit diagram showing a schematic structure corresponding to one column of the solid-state imaging device according to the second embodiment of the present invention.

[0066] exist figure 2 Among them, the solid-state imaging device is provided with a pixel array unit 1, a column amplifier circuit 3-1a, a column amplifier circuit 3-2a, a sample-hold signal conversion circuit 4-1a, and a sample-hold signal conversion circuit 4-2a.

[0067] The pixel array section 1 is provided with a pixel PCn and a pixel PCn+1, and a photodiode PD, a row selection transistor Ta, an amplification transistor Tb, a reset transistor Tc, and a readout transistor Td are respectively provided in the pixel PCn and the pixel PCn+1. . In addition, a floating diffusion FD is formed as a detection node at a connection point of the amplification transistor Tb, the reset transistor Tc, and the readout transistor Td.

[0068] Further, in the pixels PCn and PCn+1, the source of...

no. 3 approach

[0109] Figure 5 It is a circuit diagram showing a schematic structure corresponding to one row of the solid-state imaging device according to the third embodiment of the present invention. exist Figure 5 In this solid-state imaging device, a column amplifier circuit 3-1b and a column amplifier circuit 3-2b are provided to replace figure 2 The column amplifying circuit 3-1a and the column amplifying circuit 3-2a.

[0110] In the column amplifier circuit 3-1b, an amplifier transistor Tf1 and a load transistor Te1 are provided for each column. The source of the amplifier transistor Tf1 is connected to the vertical signal line V1in, the gate of the amplifier transistor Tf1 is connected to the bias power supply Vg1, and the drain of the amplifier transistor Tf1 is connected to the source of the load transistor Te1. The drain of the load transistor Te1 is connected to the power supply potential VDD, and the gate of the load transistor Te1 is connected to the switch SWsf1.

[...

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Abstract

A solid-state imaging device includes a pixel array unit where pixels are disposed in a matrix and a column amplifying circuit that is disposed at an end of the pixel array unit and amplifies a unit signal of a unit pixel read from each pixel with at least first and second amplification factors, and outputs a plurality of amplified signals.

Description

[0001] related application [0002] This application enjoys the benefits of the priority of Japanese Patent Application No. 2010-133156 filed on June 10, 2010, and this application uses the entire content of this Japanese Patent Application. technical field [0003] This embodiment generally relates to a solid-state imaging device. Background technique [0004] In a solid-state imaging device, there is known a method in which a signal processing circuit for AD conversion or CDS (Correlated Double Sampling) is provided for each column to amplify a signal read out from a pixel for each column. [0005] For example, there is a method in which a function of independently detecting the magnitude of each pixel signal and independently setting a gain for the signal magnitude is provided in the column region of the image sensor. [0006] In this method, the amplification factor is switched for a signal component detected by CDS (Correlated Double Sampling). Therefore, when CDS is ...

Claims

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Application Information

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IPC IPC(8): H04N5/335H04N5/341H04N5/378
CPCH04N5/3742H04N5/3575H04N5/355H04N25/57H04N25/616H04N25/767H04N25/75
Inventor 江川佳孝
Owner KK TOSHIBA
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