Ion implantation method

An ion implantation and ion technology, applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of waste of adjustment time and difficult adjustment technology.

Active Publication Date: 2013-07-10
ADVANCED ION BEAM TECHNOLOGY INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, in order to provide an ion beam with uniform ion concentration distribution, it takes a considerable amount of time to adjust the uniformity of the ion beam to facilitate subsequent implantation operations. In addition, in addition to the waste of adjustment time, the adjustment technology Difficulty is another problem

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Embodiment Construction

[0047] In the present invention, a special dose distribution is implanted on the target, and the special dose distribution can be in various shapes, and of course it can also be flat. A uniform dose distribution has a pattern that is flat. The method used in the present invention determines the scan rate curve according to the ion beam distribution, and rotates the target material under appropriate conditions to achieve the desired effect. In addition, the inclination angle between the target and the vertical axis can be adjusted according to the process requirements to fully control the dose distribution in the device. Its detailed description is as follows, and the preferred embodiments described are only for illustration, not for limiting the present invention.

[0048] Firstly, an ion implantation method according to an embodiment of the present invention is used for implanting ions into a target. The ion implantation method includes: providing an ion beam, wherein the ion...

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Abstract

The invention relates to an ion implantation method which is used for implanting ions into a target material; and the ion implantation method comprises the following steps of: implanting a plurality of ions into the target material by rotating the target material through the cooperation of constant ratio scanning; or, implanting the plurality of ions into the target material at a variable rate under the condition that the target material is not rotated. An implantation result of the ions with specific dose distribution can be obtained without providing ion beams with uniform-distributed concentration, thereby the time of manufacturing procedure can be reduced and the yield of manufacturing procedure can be increased.

Description

[0001] This application is a divisional application of the invention patent application with the application number "200710162318.X" and the invention title "ion implantation method" submitted by the applicant on September 27, 2007. technical field [0002] The invention relates to an ion implantation method, in particular to an ion implantation method capable of producing special dosage ion distribution. Background technique [0003] In recent years, the manufacturing process of semiconductor devices such as LSI (Large-scale integration, LSI) and memory is quite complicated, and the semiconductor substrate becomes larger in size and extremely expensive. Device size and density is an important issue. Therefore, the practical application of the ion implantation method becomes more important. [0004] Generally speaking, the ion implantation method ionizes molecules to be doped, accelerates the ionized doping, and implants a specific dose of ions into a specific region of a s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265
Inventor 林伟政沈政辉
Owner ADVANCED ION BEAM TECHNOLOGY INC
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