Ion implantation method

A technology of ion implantation and ions, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc., can solve the problems of difficult adjustment technology and waste of adjustment time

Active Publication Date: 2012-01-18
ADVANCED ION BEAM TECHNOLOGY INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this method, in order to provide an ion beam with uniform ion concentration distribution, it takes a considerable amount of time to adjust the uniformity of the ion beam to facilitate subsequent implantation operations. In addition, in addition to the waste of adjustment time, the adjustment technology Difficulty is another problem

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Embodiment Construction

[0048] In the present invention, a special dose distribution is implanted on the target, and the special dose distribution can be in various shapes, and of course it can also be flat. A uniform dose distribution has a pattern that is flat. The method used in the present invention determines the scan rate curve according to the ion beam distribution, and rotates the target material under appropriate conditions to achieve the desired effect. In addition, the inclination angle between the target and the vertical axis can be adjusted according to the process requirements to fully control the dose distribution in the device. Its detailed description is as follows, and the preferred embodiments described are only for illustration, not for limiting the present invention.

[0049] Firstly, an ion implantation method according to an embodiment of the present invention is used for implanting ions into a target. The ion implantation method includes: providing an ion beam, wherein the ion...

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Abstract

The invention provides an ion implantation method used for implanting ions into a target. The ion implantation method comprises the step of implanting multiple ions into the target by using a rotating target during constant speed scanning; or implanting the multiple ions into the target by using a variable speed under the premise that the target is not rotated. Ion implantation result with special dose distribution can be obtained without need of providing ion beams with uniform concentration distribution; the process time can be reduced; and the process yield can be increased.

Description

[0001] This application is a divisional application of the invention patent application with the application number "200710162318.X" and the invention title "ion implantation method" submitted by the applicant on September 27, 2007. technical field [0002] The invention relates to an ion implantation method, in particular to an ion implantation method capable of producing special dosage ion distribution. Background technique [0003] In recent years, the manufacturing process of semiconductor devices such as LSI (Large-scale integration, LSI) and memory is quite complicated, and the semiconductor substrate becomes larger in size and extremely expensive. Device size and density is an important issue. Therefore, the practical application of the ion implantation method becomes more important. [0004] Generally speaking, the ion implantation method ionizes molecules to be doped, accelerates the ionized doping, and implants a specific dose of ions into a specific region of a s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01J37/317
Inventor 林伟政沈政辉
Owner ADVANCED ION BEAM TECHNOLOGY INC
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