Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ion implantation method

A technology of ion implantation and ionization, which is applied in the manufacture of discharge tubes, electrical components, semiconductors/solid-state devices, etc., and can solve problems such as waste of time for adjustment and difficulty in adjustment technology

Active Publication Date: 2009-04-01
ADVANCED ION BEAM TECHNOLOGY INC
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this method, in order to provide an ion beam with uniform ion concentration distribution, it takes a considerable amount of time to adjust the uniformity of the ion beam to facilitate subsequent implantation operations. In addition, in addition to the waste of adjustment time, the adjustment technology Difficulty is another problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion implantation method
  • Ion implantation method
  • Ion implantation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0048] In the present invention, a special dose distribution is implanted on the target, and the special dose distribution can be in various shapes, and of course it can also be flat. A uniform dose distribution has a pattern that is flat. The method used in the present invention determines the scan rate curve according to the ion beam distribution, and rotates the target material under appropriate conditions to achieve the desired effect. In addition, the inclination angle between the target and the vertical axis can be adjusted according to the process requirements to fully control the dose distribution in the device. Its detailed description is as follows, and the preferred embodiments described are only for illustration, not for limiting the present invention.

[0049] Firstly, an ion implantation method according to an embodiment of the present invention is used for implanting ions into a target. The ion implantation method includes: providing an ion beam, wherein the ion...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An iron implantation method is used for implanting iron into target material; by adopting the iron implantation method, the target material is rotated and matched with constant-velocity scanning to implant a plurality of irons into the target material; or the variable-velocity scanning can be adopted to match the target material which is not rotated to implant a plurality of irons into the target material. The iron implantation result with special dosage distribution can be achieved without providing iron beam with even consistency distribution; the time of production process can be reduced and yield rate of the production process can be improved.

Description

technical field [0001] The invention relates to an ion implantation method, in particular to an ion implantation method capable of producing special dosage ion distribution. Background technique [0002] In recent years, the manufacturing process of semiconductor devices such as LSI (Large-scale integration, LSI) and memory is quite complicated, and the semiconductor substrate becomes larger in size and extremely expensive. Device size and density is an important issue. Therefore, the practical application of the ion implantation method becomes more important. [0003] Generally speaking, the ion implantation method ionizes molecules to be doped, accelerates the ionized doping, and implants a specific dose of ions into a specific region of a substrate in a scanning manner. Among them, the ion implantation method can control the doping more precisely to provide better uniformity. In addition, in the manufacturing process of semiconductor devices, the distribution of gate c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/317H01L21/265
Inventor 林伟政沈政辉
Owner ADVANCED ION BEAM TECHNOLOGY INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com