Technology for improving conversion efficiency of solar photovoltaic battery

Abstract

The invention belongs to the technical field of semiconductor solar photovoltaic batteries and in particular relates to a technology for improving the conversion efficiency of a solar photovoltaic battery. An additional layer comprising a transparent conductive film layer is additionally arranged on an insulation medium mask layer on the front surface of the solar photovoltaic battery, a voltage is applied to the transparent conductive film, and ions are injected to a transparent negative charge capturing layer and captured by the transparent negative charge capturing layer to achieve the purposes of changing the surface potential, the surface space charge region and the surface energy band of a semiconductor material under the insulation medium mask layer on the front surface of the solar photovoltaic battery. An exhaust (or reverse type) state of the surface space charge region of the semiconductor is changed into a stacked state, and a conduction band in the surface energy band is moved to an interface defect energy level near a position far away from the center of a forbidden band, both of which are beneficial to reducing the effective surface recombination rate of a photon-generated carrier and collecting photon-generated minority carriers as much as possible, increasing photocurrent output of the solar voltaic battery and improving the conversion efficiency of the solar voltaic battery.

Description

technical field [0001] The invention belongs to the technical field of semiconductor solar photovoltaic cells and relates to a new technology for improving the conversion efficiency of solar photovoltaic cells. On the insulating dielectric mask layer on the front surface of the solar photovoltaic cell, add an additional layer including a transparent conductive thin film layer, apply a voltage on the transparent conductive thin film layer, inject electrons into the transparent insulating dielectric layer with charge trapping ability, and be its captured. The electrons trapped by the transparent insulating dielectric layer with charge trapping ability will change the surface potential, surface energy band, and surface space charge region of the semiconductor material under the insulating dielectric mask layer on the front surface of the solar photovoltaic cell to reduce the photogenerated carrier The effective surface recombination rate enables more photogenerated minority carr...

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Problems solved by technology

However, even alumina (Al 2 o 3 ) The surface density of negative charges in the film layer reaches 10 11-12 / cm 2 , it can only avoid the adverse effect on photogenerated carriers when the surface space charge region in the semiconductor is a depletion layer, but the interface defect energy level of the insulating dielectric mask layer on the front surface of the battery and the semiconductor interface, as the photogenerated carrier The adverse effect of the recombination center of electrons on the photogenerated carriers near the semiconductor surface still exists, which limits the further improvement of the conversion efficiency of n-type single crystal silicon solar cells

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