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Circuit and method for characterizing the performance of a sense amplifier

A technology for sensing amplifiers and calibrating circuits, which is applied in the direction of instruments, static memory, digital memory information, etc., and can solve the problem that data cannot be read correctly

Active Publication Date: 2012-03-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the sense amplifier has a trip point greater than 5000 ohms for a "read high resistance" state, or less than 200 ohms for a "read low resistance" state, the data will not be correct. read

Method used

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  • Circuit and method for characterizing the performance of a sense amplifier
  • Circuit and method for characterizing the performance of a sense amplifier
  • Circuit and method for characterizing the performance of a sense amplifier

Examples

Experimental program
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Embodiment Construction

[0051] figure 1It shows a sense amplifier (sense amplifier) ​​calibration circuit 100 (hereinafter referred to as SA calibration circuit) of an electronic fuse according to an embodiment of the present invention. The SA calibration circuit 100 includes a plurality of P-type metal oxide semiconductor (Positive Channel Metal Oxide Semiconductor, PMOSFET, hereinafter referred to as PMOS) transistors 102, 104, 106, 108, and a plurality of N-type metal oxide semiconductor (Negative Channel Metal Oxide Semiconductor , NMOSFET, hereinafter referred to as NMOS) transistors 110, 114, 116 form a sense amplifier 101, a reference circuit (reference circuit) 118, a fuse box (fuse box) 120, a fuse bus decoder (fuse bus decoder) 122, an inverter ( inverter) 124.

[0052] The source of the PMOS transistor 102 is coupled to a high supply potential (positive supply voltage) V DD , the drain is coupled to the node 126 , and the node 126 is coupled to the drain of the NMOS transistor 110 . The...

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Abstract

An integrated circuit includes a sensing circuit, a fuse box, and a fuse bus decoder. The sensing circuit includes an output node, and the fuse box includes a plurality of switches coupled in series with a plurality of resistive elements. The fuse box is coupled to the output node of the sensing circuit from which the fuse box is configured to receive a current. The fuse bus decoder is coupled to the fuse box and includes at least one demultiplexer configured to receive a signal and in response output a plurality of control signals for selectively opening and closing the switches of the fuse box to adjust a resistance across the fuse box. A voltage of the output node of the sense amplifier is based on a resistance the fuse box and the current.

Description

technical field [0001] The present invention relates to an integrated circuit (integrated circuit), and in particular to characteristics of a sense amplifier (SA) for an electronic fuse. Background technique [0002] Electronic systems usually require the ability to enable, disable or modify specific functions of the integrated circuit chip after the integrated circuit is manufactured. Such customization or modification is usually accomplished by blowing an electronic fuse on the integrated circuit. The electronic fuse may comprise a silicided polysilicon conductor which may be blown by passing an electric current of sufficient magnitude and duration to melt or electromigrate at least a portion of the conductor between the two ends of the electronic fuse. silicide. [0003] The sense amplifier is implemented as an e-fuse to sense the state of the e-fuse; that is: a high resistance when the e-fuse is blown, and a low resistance when the e-fuse is not blown or intact. Howev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06
CPCG11C29/026G11C29/028
Inventor 廖唯理林松杰许国原
Owner TAIWAN SEMICON MFG CO LTD