Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Coupling capacitor-affected dummy metal filling method for chemical mechanical polishing process

A technology of coupling capacitors and metal filling, which is applied to electrical components, circuits, electrical digital data processing, etc., can solve the problems of compromise between accuracy and calculation speed, and the inability to balance speed and accuracy.

Inactive Publication Date: 2014-03-05
FUDAN UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, this method can guarantee both the final result ε optimality ( -optimality), and can achieve a compromise between the accuracy of the final result and the calculation speed, which solves the problem that the speed and accuracy in the previous methods cannot be balanced, and can be applied to solve the problem of large-scale layout dummy filling

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Coupling capacitor-affected dummy metal filling method for chemical mechanical polishing process
  • Coupling capacitor-affected dummy metal filling method for chemical mechanical polishing process
  • Coupling capacitor-affected dummy metal filling method for chemical mechanical polishing process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0110] In order to make the objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described below through specific examples.

[0111] This part of the experiment is to verify the effectiveness of the dummy metal filling approximation algorithm proposed in this paper to minimize the influence of coupling capacitance. Experimental test cases are from [12] and are also available at the Collaborative Benchmarking Laboratory (CBL). The layout information of the experimental test is shown in Table 1, and "#Wire" in the table indicates the number of information line segments in the layout.

[0112] Applying the complete polynomial time approximation algorithm FPTAS proposed by the present invention to obtain the result of dummy metal filling, at first need to carry out fixed r-division to the whole layout, in this embodiment r=3, adopt the filling pattern of rectangular small metal block here, and assume that...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the technical field of integrated circuit semiconductor manufacture, and relates to a coupling capacitor-affected dummy metal filling method for a chemical mechanical polishing process. In the method, the problem that finding the solution to the filling of the minimized coupling capacitor-affected dummy metal is converted to a special covering linear programming problem, and the problem is solved by a fully polynomial-time approximation method. In the method, the optimality of final results can be ensured, and the finally obtained coupling capacitor increment brought by a dummy metal does not exceed the minimum increment. The method solves the difficulty that both speed and accuracy can not be simultaneously considered, and can be applied to solving the dummy filling problem of a large-scale layout.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit semiconductor manufacturing, and relates to a chemical mechanical polishing process dummy metal filling method, in particular to a chemical mechanical polishing process dummy metal filling method aimed at the influence of coupling capacitance. In particular, the invention relates to a fast approximation algorithm for dummy metal filling with minimizing the influence of dummy metal filling (dummy fill) on interconnection coupling capacitance as an optimization goal, and at the same time ensuring the uniformity of layout metal density. technical background [0002] With the further development of integrated circuit semiconductor manufacturing technology, the feature size of integrated circuits is further reduced, and the damascene copper interconnection process is widely used in semiconductor manufacturing processes, and has become the mainstream process for multilayer wiring of integrat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50H01L21/768
Inventor 曾璇周海严昌浩陶俊冯春阳
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com