Dummy filling method of chemical-mechanical polishing process

A technology of chemical mechanics and filling methods, which is applied in special data processing applications, instruments, electrical digital data processing, etc., and can solve problems such as the compromise between accuracy and calculation speed, and the inability to balance speed and accuracy.

Active Publication Date: 2011-02-02
FUDAN UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

This method can not only guarantee the ε-optimality of the final result, but also achieve a compromise between the accuracy of the final result and the calculation speed, which solves the problem that the speed and accuracy cannot be balanced in the previous methods.

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  • Dummy filling method of chemical-mechanical polishing process
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  • Dummy filling method of chemical-mechanical polishing process

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Embodiment Construction

[0100] In order to make the above objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described below through specific examples.

[0101] The first embodiment of the present invention is used to test the feasibility of the method of the present invention. In this embodiment, the input is a layout after FPGA layout and wiring, the size is 854um*243um, and there are 202238 interconnected metal patterns on the layout. In this embodiment, the layout is enlarged by 3 times as it is and used as the input layout. Finally, it is required that the metal density range of the layout after dummy metal filling is L=0.4 to U=0.5.

[0102] We apply the complete polynomial time approximation algorithm FPTAS proposed by the present invention to obtain the result of dummy metal filling. First, we need to carry out fixed r-division of the entire layout. In this embodiment, r=5, and the size of the floating window is 10...

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Abstract

The invention belongs to the technical field of manufacturing of integrated circuit semiconductors, and relates to a dummy filling method of a chemical-mechanical polishing process. By the method, a dummy filling problem that a minimum dummy metal number is solved is converted into one type of special coverage linear programming CLP problems and the minimum dummy filling problem is solved by applying one full polynomial time approximation algorithm FPTAS in the combinatorial optimization field according to the characteristics of the CLP problem. The method can ensure the epsilon optimality of a final result and realize the compromise of the final result accuracy and the calculating speed, so that the problem that the speed and the accuracy cannot be simultaneously taken into consideration existing in the conventional method is solved; and by the method, the approximately least dummy filling number can also be acquired under the linear time complexity, and the method can be used for solving the large-scale territory dummy filling problem.

Description

technical field [0001] The invention relates to a fast dummy fill method which takes the minimum number of dummy fills as the optimization target and ensures the uniformity of layout metal density, and belongs to the technical field of integrated circuit semiconductor manufacturing. technical background [0002] With the further development of integrated circuit semiconductor manufacturing technology, the feature size of integrated circuits is further reduced, and the damascene copper interconnection process is widely used in semiconductor manufacturing processes, and has become the mainstream process for multilayer wiring of integrated circuits. In the multi-layer wiring three-dimensional structure of copper interconnection, the high planarization of the chip surface is one of the key technologies. So far, the Chemical Mechanical Polishing (CMP) technology is the only planarization technology successfully and used on a large scale. [0003] One of the biggest problems in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
Inventor 曾璇周海严昌浩陶俊冯春阳
Owner FUDAN UNIV
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