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Transistor structure

A technology of transistors and semiconductors, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of high process temperature, low carrier mobility, high manufacturing cost, etc., and solve the problem of low carrier mobility Effect

Active Publication Date: 2014-02-05
E INK HLDG INC
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Problems solved by technology

[0005] The object of the present invention is to provide a transistor structure, which uses transparent oxide semiconductors and organic polymer semiconductors, so as to solve the problems of using hydrogenated amorphous silicon thin film transistors and low-temperature polycrystalline silicon, such as low carrier mobility, high manufacturing cost and Problems such as high process temperature

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  • Transistor structure
  • Transistor structure
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Embodiment Construction

[0027] The following is a detailed description of the embodiments with accompanying drawings, but the provided embodiments are not used to limit the scope of the present invention, and the description of the structure and operation is not used to limit the order of its execution, any structure recombined by components , the resulting devices with equal efficacy are all within the scope of the present invention. The accompanying drawings are for illustration purposes only and are not drawn to original scale.

[0028] Figure 1A to Figure 1B It is a schematic diagram showing the structure of a transistor according to the first embodiment of the present invention. Such as Figure 1A As shown, the transistor structure 100 includes a first patterned conductive layer, a second patterned conductive layer, a third patterned conductive layer, a patterned N-type transparent oxide semiconductor layer (n-type transparent oxide semiconductor) 106, a patterned P A p-type organic polymer s...

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Abstract

The invention relates to a transistor structure which comprises a patterning N-type transparent oxide semiconductor layer and a patterning P-type organic high molecular semiconductor layer. The patterning N-type transparent oxide semiconductor layer is formed on a baseplate to serve as a base electrode. The patterning P-type organic high molecular semiconductor layer is formed on the patterning N-type transparent oxide semiconductor layer and comprises a first part and a second part so that the patterning N-type transparent oxide semiconductor layer respectively forms heterojunction interfaces with the first part and the second part of the patterning P-type organic high molecular semiconductor layer, wherein the first part of the patterning P-type organic high molecular semiconductor layer serves as an emitting electrode, and the second part of the patterning P-type organic high molecular semiconductor layer serves as a collecting electrode.

Description

technical field [0001] The present invention relates to a transistor structure, and in particular to a transistor structure using a transparent oxide semiconductor and an organic polymer semiconductor. Background technique [0002] With the advancement of technology and consumers' requirements for display quality, display technology is also becoming more and more mature. In recent years, the next-generation display technology has been gradually developed, that is, thin, transparent, and flexible display technology and components. The quality and characteristics of the components are the main research goals for the display. [0003] In terms of component materials, the hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) technology is quite mature, but its process temperature is high, light is opaque, and the carrier mobility is low, so it is difficult to integrate some characteristic components. The manufacturing process of the thin film transistor is also manuf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30
Inventor 叶佳俊王裕霖蔡耀州黄松辉
Owner E INK HLDG INC
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