39 results about "Molecular semiconductor" patented technology

The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.

Disclosed are an organic small molecular semiconductor material, and a synthetic method therefor. The semiconductor material comprises a diaromatic ring pentalene π-conjugate unit and an aromatic group, and has the following structural formula (I), wherein X1 and X2 are independently selected from O, S or Se; X3 is selected from O, S, Se, NR2, C(R2)2 or Si(R2)2; R2 is selected from a linear or branched alkyl group comprising 1-20 carbon atoms, and a linear or branched modified alkaryl or heterocyclic aryl comprising 7-20 carbon atoms; R1 is selected from a hydrogen atom, a linear or branched alkyl group comprising 1-20 carbon atoms, and a linear or branched modified alkaryl or heterocyclic aryl comprising 7-20 carbon atoms; and A is an electron-withdrawing unit. The semiconductor material can be synthesised by a transition metal catalysed condensation reaction. The semiconductor material of the present invention has a small spectrum band gap, a long spectrum absorption wavelength, a relatively low highest occupied molecular orbital and lowest unoccupied molecular orbital energy level, and can be used as a photoelectric material, especially as a receptor material in an organic photovoltaic device, and it also has advantages such as a simple preparation process, a low cost, etc.

The invention relates to a transistor structure which comprises a patterning N-type transparent oxide semiconductor layer and a patterning P-type organic high molecular semiconductor layer. The patterning N-type transparent oxide semiconductor layer is formed on a baseplate to serve as a base electrode. The patterning P-type organic high molecular semiconductor layer is formed on the patterning N-type transparent oxide semiconductor layer and comprises a first part and a second part so that the patterning N-type transparent oxide semiconductor layer respectively forms heterojunction interfaces with the first part and the second part of the patterning P-type organic high molecular semiconductor layer, wherein the first part of the patterning P-type organic high molecular semiconductor layer serves as an emitting electrode, and the second part of the patterning P-type organic high molecular semiconductor layer serves as a collecting electrode.