Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Double-parameter and high-sensitivity organic small molecular semiconductor film magnetic sensor

A magnetic sensor, high-sensitivity technology, applied in the direction of the magnitude/direction of the magnetic field, resistors controlled by the magnetic field, instruments, etc., can solve problems that have not yet been industrialized, and achieve high and small size, high measurement accuracy, and good thermal stability Effect

Inactive Publication Date: 2010-10-13
SOUTHWEST UNIVERSITY
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with traditional AMR and GMR materials, organic semiconductor materials have many advantages such as wide range of material selection, long electron spin diffusion length, easy adjustment of electronic structure, simple process required, and the ability to be made into flexible substrate devices. At present, organic semiconductor high-sensitivity magnetic sensors are being actively developed, but industrialization has not yet been realized

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Double-parameter and high-sensitivity organic small molecular semiconductor film magnetic sensor
  • Double-parameter and high-sensitivity organic small molecular semiconductor film magnetic sensor
  • Double-parameter and high-sensitivity organic small molecular semiconductor film magnetic sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Such as figure 1 As shown, the structure of the organic semiconductor magnetic sensor from bottom to top is: a glass substrate 1 (which can be replaced by a flexible substrate), a conductive transparent anode (ITO) 2, an organic material functional layer 3 and a LiF / Al cathode 4. The organic material functional layer 3 is composed of a hole transport layer NPB 31 near the anode, a light-emitting layer Alq3: 3% dopant (DCM) 32, and an electron transport layer Alq3 33 near the cathode. Among them, the organic materials Alq3, NPB and DCM are all commercially purchased from Adrich Company in the United States with a purity of >99.99%; they can also be synthesized by chemical means.

[0029] The total thickness of the magnetic sensor in the vertical one-dimensional direction is 340 nm. The thickness of the conductive transparent anode ITO is 100 nm, the thickness of the organic material functional layer is 140 nm, and the thickness of the LiF / Al cathode is 100 nm. The thicknes...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a double-parameter and high-sensitivity organic small molecular semiconductor film magnetic sensor, which is an organic electroluminescence material Alq3-based organic semiconductor film device. The magnetic sensor has a laminated film structure, and the structure comprises a substrate, a conductive transparent anode ITO, an organic material functional layer and a LiF / Al cathode from the bottom to the top; the organic material functional layer consists of a hole transmission layer NPB, a sensing layer Alq3: 3 percent doping agent DCM and an electronic transmission layer Alq3; and the electroluminescence intensity of the magnetic sensor is measured by a silicon photoelectric probe and output through a digital universal meter, and the obtained signal is finally acquired by a computer through a data acquisition module. The magnetic sensor also has the advantages of the current popular MR sensor such as low power consumption, high sensitivity, small size and the like, can realize double-parameter (namely magnetic resistance and magnetic luminescence) response, and has good thermal stability at the same time; and the reliability of the sensor is greatly enhanced.

Description

Technical field [0001] The invention relates to organic semiconductor devices, and relates to the technical field of magnetic sensors. Background technique [0002] Magnetic sensors are usually used on objects with small magnets. By capturing the strength of the magnetic field and its changes, it provides a unique means for detecting the approach, movement or rotation of objects. The history of using magnetic sensors is quite long. Some traditional applications: For example, the use of gear sensors to measure the speed of gears, the application of coil-type sensors to trigger the circuit loop of traffic light signals buried in the road, and the use of Hall devices to make rotary position sensors and Current sensors, etc., due to the deficiencies of price, size, and reliability, these traditional magnetic sensors have been saturated in the market. [0003] After entering the 21st century, due to the tremendous progress made in miniaturization, the demand for fully integrated magnet...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01R33/09G01R33/032H01L43/08H10N50/10
Inventor 熊祖洪陈平雷衍连张巧明
Owner SOUTHWEST UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products