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Preparation method of organic film transistor

An organic thin film and transistor technology, which is applied in the field of preparation of organic thin film transistors, can solve the problems of poor device repeatability, time-consuming, difficult to meet large area, array, etc., achieve high mobility and reduce the effect of preparation cost

Active Publication Date: 2012-08-15
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Description
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  • Application Information

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Problems solved by technology

However, there are still great challenges in the realization of the excellent thin film morphology of the above-mentioned semiconductor materials, and the performance of the device is obviously dependent on the crystallization technology and the online crystallization control process, so the repeatability of the device is relatively poor, and the mobility difference of the transistor is unexpectedly More than 1000 times, it is difficult to meet the needs of large area and array
[0005] From the point of view of the preparation process, the current active layer and insulating layer of the transistor are mostly prepared in steps. Not only the preparation steps are cumbersome and time-consuming, but also the microstructure of the interface between the semiconductor layer and the insulating layer is difficult to control, which is not conducive to current carrying. Subtransfer

Method used

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  • Preparation method of organic film transistor
  • Preparation method of organic film transistor

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Embodiment 1

[0022] The method for preparing an organic thin film transistor provided in this embodiment includes:

[0023] In step 1, a layer of gate electrode with a thickness of 100 nm is prepared on the substrate by sputtering, and the gate electrode is made of Ta.

[0024] Step 2, on the gate electrode, prepare a layer of 100 nm-thick cross-linked film of small molecular semiconductor / insulating polymer as the insulating layer and the active layer by spin-coating method.

[0025] Wherein, the cross-linked film is formed by annealing a mixed solution of a conjugated condensed ring semiconductor material and a polymer. Small-molecule semiconductor materials are embedded in polymeric media as highly crystalline, one-dimensional interconnected network structures, and the aforementioned nanostructures undergo vertical phase separation in crosslinked films.

[0026] Step 3, the source electrode and the drain electrode composed of PEDOT:PSS are prepared on the cross-linked film by the drop ...

Embodiment 2

[0029] The method for preparing an organic thin film transistor provided in this embodiment includes:

[0030] In step 1, a layer of gate electrode with a thickness of 50 nm is prepared on the substrate by thermal evaporation, and the gate electrode is made of Au.

[0031] Step 2, on the gate electrode, prepare a layer of 5000nm thick cross-linked film of small molecular semiconductor / insulating polymer as the insulating layer and the active layer by the drop film method.

[0032] Wherein, the cross-linked film is formed by annealing a mixed solution of a conjugated condensed ring semiconductor material and a polymer. Small-molecule semiconductor materials are embedded in polymeric media as highly crystalline, one-dimensional interconnected network structures, and the aforementioned nanostructures undergo vertical phase separation in crosslinked films.

[0033] Step three, inkjet printing the source electrode and the drain electrode made of Ag on the cross-linked film.

[00...

Embodiment 3

[0036] The method for preparing an organic thin film transistor provided in this embodiment includes:

[0037] In step 1, a layer of gate electrode with a thickness of 100 nm is prepared on the substrate by a printing method, and the gate electrode is made of Si.

[0038]Step 2, on the gate electrode, prepare a 2000nm-thick cross-linked film of small molecular semiconductor / insulating polymer as the insulating layer and the active layer by aerosol jet printing technology.

[0039] Wherein, the cross-linked film is formed by annealing a mixed solution of a conjugated condensed ring semiconductor material and a polymer. Small-molecule semiconductor materials are embedded in polymeric media as highly crystalline, one-dimensional interconnected network structures, and the aforementioned nanostructures undergo vertical phase separation in crosslinked films.

[0040] In step three, a source electrode and a drain electrode made of Ag are prepared on the cross-linked film by thermal ...

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Abstract

The invention discloses a method for preparing an organic film transistor. An active layer and an insulating layer consist of small-molecular semiconductors / insulating polymer crosslinking films, wherein the small-molecular semiconductor / insulating polymer crosslinking film consists of a one-dimensional Internet-shaped nano-structure formed by the small-molecular semiconductor material in an insulating polymer / solvent system. The organic film transistor provided by the invention has the characteristics of solubilization preparation, flexibility and high migration rate; and meanwhile, the preparation method provided by the invention can realize simple solubilization preparation of the active layer and insulating layer of the transistor, reduces the preparation cost, and has important application values in the preparation of a flexible, large-area and low-cost organic film transistor.

Description

technical field [0001] The invention relates to a preparation method of an organic thin film transistor. Background technique [0002] Organic thin film transistors (OTFTs) are the core components of large-area displays, flexible electronics, and sensors, and are also one of the important research contents of semiconductors. In recent years, organic thin film transistor technology has made great progress. Although OTFTs cannot compete with silicon transistors in high-speed, high-performance, and high-integration applications, they have a huge role in the display field as LCD and OLED drive backplanes due to their advantages such as simple process, low cost, light weight, and good flexibility. Its potential is considered to be the core technology of the new generation of flat panel display. In order to obtain higher performance and realize the preparation of large-area and low-cost organic thin film transistors, the design, preparation and processing technology optimization...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40H01L51/30
Inventor 王凤霞潘革波
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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