Cobalt-molecular multiferroic material based spin filtering heterojunction device and preparation thereof

Abstract

The invention relates to a cobalt-molecular multiferroic material based spin filtering heterojunction device and preparation thereof. The spin filtering heterojunction device comprises two cobalt electrodes as source and drain electrodes respectively, a molecular multiferroic material (NH4)3Cr2O8 forming a thin material layer of an intermediate scattering area between the two cobalt electrodes, and grids connected to the two sides of the molecular multiferroic material (NH4)3Cr2O8; and the two cobalt electrodes include thin layers formed by metal materials cobalt respectively. Compared with the prior art, The molecular multiferroic material (NH4)3Cr2O8 makes contact with the surfaces of the Co electrodes to form a unique spin filtering effect due to spin interaction between 3d tracks of chromium ions (Cr5+) in the magnetic center of the molecular multiferroic material (NH4)3Cr2O8; and in addition, the spin filtering effect is sound and stable and is irrelevant to the type of a semiconductor substrate of a device, and the device is easy to realize, and can be widely applied to molecular semiconductor electronic devices.

Description

technical field [0001] The invention relates to the technical field of spintronics devices, in particular to a spin filter heterojunction device based on a cobalt-molecular multiferroic material system and its preparation. Background technique [0002] Molecular electronics studies electronics at the molecular level, and its goal is to replace solid electronic components such as silicon-based semiconductor transistors with single molecules, supramolecules or molecular clusters to assemble logic circuits and even complete molecular computers. Its research content includes the synthesis of various molecular electronic devices, performance testing and how to assemble them together to achieve certain logic functions. Compared with traditional solid-state electronics, molecular electronics has powerful advantages. The current microelectronics processing technology will approach the limit of development after 10 years, and the continuous reduction of line width will make solid-st...

AI Technical Summary

Problems solved by technology

The current microelectronics processing technology will approach the limit of development after 10 years, and the continuous reduction of line width will make solid-state electronic devices no longer follow the traditional operation rules; at the same time, the reduction of line width will also increase the processing cost

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