Fast ferroelectric transistor memory based on two-dimensional organic molecular semiconductors and preparation thereof
A technology of ferroelectric transistors and organic molecules, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of no advantages and hinder the state transition speed of organic memory, and achieve the effect of improving the operation speed
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[0029] The preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, so that the advantages and features of the present invention can be more easily understood by those skilled in the art, so as to define the protection scope of the present invention more clearly.
[0030] see figure 1 , an embodiment of the present invention: a preparation of a fast ferroelectric transistor memory based on a two-dimensional organic molecular semiconductor, comprising:
[0031] Two-dimensional organic molecular semiconductor ferroelectric transistor memory is an important application of two-dimensional organic materials in memory. Compared with inorganic memory, the main solution is: large storage density, small size devices, simple Thin film preparation process, large area preparation; compared with some other organic memories, the semiconductor layer is thinner, the carrier mobility of the device is greater, and the data s...
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